PSHB에 의한 CuBr 반도체 양자구슬에서의 LO-phonon energy 측정
- 원문 URL
We fabricate the CuBr semiconductor quantum dots(QDs) in a glass matrix. The absorption spectrum of Z₁,₂ exciton of the CuBr QDs was measured at different temperatures from 8.6K to 100K. PSHB experiment was performed by the pump-probe method. Hole burning spectrum of CuBr quantum dots was measured by the selective excitation techniques. When the spectrally narrow-band laser excites the inhomogeneously broadened absorption band of CuBr quantum dots, a narrow bleaching hole and several side holes arise in the absorption spectra at 8.6K and are present for more than a few hours after the laser irradiation. There are two processes in the decay of the hole depth(zero phonon line). Decay time of the fast process is 4 minutes and the slow process is about 2 hours. The energy difference between the zero phonon line and side hole equals to the LO-phonon energy of CuBr semiconductor. The LO-phonon energy is proportional to the inverse of the radius of quantum dots.