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PSHB에 의한 CuBr 반도체 양자구슬에서의 LO-phonon energy 측정 원문보기

  • 저자

    박지호

  • 학위수여기관

    昌原大學校

  • 학위구분

    국내석사

  • 학과

    物理學科 物理學專攻

  • 지도교수

  • 발행년도

    2002

  • 총페이지

    iii, 42장.

  • 키워드

  • 언어

    kor

  • 원문 URL

    http://www.riss.kr/link?id=T8935898&outLink=K  

  • 초록

    We fabricate the CuBr semiconductor quantum dots(QDs) in a glass matrix. The absorption spectrum of Z₁,₂ exciton of the CuBr QDs was measured at different temperatures from 8.6K to 100K. PSHB experiment was performed by the pump-probe method. Hole burning spectrum of CuBr quantum dots was measured by the selective excitation techniques. When the spectrally narrow-band laser excites the inhomogeneously broadened absorption band of CuBr quantum dots, a narrow bleaching hole and several side holes arise in the absorption spectra at 8.6K and are present for more than a few hours after the laser irradiation. There are two processes in the decay of the hole depth(zero phonon line). Decay time of the fast process is 4 minutes and the slow process is about 2 hours. The energy difference between the zero phonon line and side hole equals to the LO-phonon energy of CuBr semiconductor. The LO-phonon energy is proportional to the inverse of the radius of quantum dots.


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