Reactive RF magnetron sputtering으로 제작한 TiO₂박막의 물성 연구
Study on Physical Properties of radio frequency magnetron sputtered titanium dioxide films
Reactive RF magnetron sputtering TiO 박막;
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Physical properties of TiO2 thin films were fabricated by the reactive RF magnetron sputtering method were studied through XRD, FT-IR, SEM, UV-VIS spetrometer. Thermal Annealing was carried out in the air, the temperatures were 700∼1100℃ and the annealing times were 2 hours. TiO_(2) thin films were deposited by DC sputtering were annealed in air at 800℃ without heating. XRD of this films shows anatase structure. case of RF sputtering shows rutile with increases of the annealing temperatures. The oxygen and Ti bonding confiqurations were checked by FT-IR measurements. The peaks of the Ti-O bond were observed in samples. The positions of this peaks were found to be at 609~619cm-1 for the annealed sampled. When Ar : O2 was 8 : 2 ,the deposition rate was 566Å/min for the sample made without heating . Optical band gap energy investigated by UV-VIS spectrometer was 2.58∼3.15eV.