RF 반응성 스퍼터링에 의해 Ta 하부전극 위에 증착된 Ta_(2)O_(5) MIM 커패시터의 특성
Characteristics of Ta_(2)O_(5) MIM capacitor deposited on Ta bottom electrode by RF-magnetron reactive sputtering
RF 반응성 스퍼터링 Ta 하부전극 MIM 커패시터 유전체 박막;
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The electrical characteristics of Ta_(2)O_(5)(tantalum pentoxide) films sputtered on Ta/Ti/SiO_(2)/p-Si substrate were investigated. Ta(tantalum) was used for the bottom and top electrode for the purpose of simplifying the manufacturing process in IPD's(integrated passive devices). Dielectric materials deposited on Ta/Ti/SiO_(2)/p-Si were annealed at 700 ℃ for 60 sec in vacuum. The XRD results showed that as-deposited Ta had a highly preferred orientation, but Ta_(2)O_(5) film possessed amorphous structure, which was transformed to crystalline by rapid thermal annealing. We compared the C-F, C-V, TCC and lnJ-E^((1)/(2)) of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by heat treatment and dielectric constant was high than Ta_(2)O_(5) deposited on Pt, Au, etc.. Therefore, Ta as electrode material is thought that is suitable as material to replace the precious metal electrodes and to simplity the fabrication process of the Ta_(2)O_(5) MIM capacitor.
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