Thermal analysis of GaN-based LEDs : Analytical modeling and direct on-chip temperature measurement
analysis GaN-based LEDs measurement temperature Thermal;
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High power light emitting diodes (LEDs) continue to increase in output flux with the best III-nitride based devices today. The high-flux performance of these devices brings many new applications for LEDs. With the high-flux performance, there is also generated high heat flux. This internal self-heating is a byproduct of electrical current flow in the electronic device during operation; the heat generated elevates the temperature in the junctions. Since higher junction temperatures are associated with reduced operating life, it is very important to analyze the thermal behavior of LEDs and optimize the heat flow path. There are numerous methods for measuring the temperature of an operating semiconductor device. In this thesis, liquid crystal thermography method has been conducted. Computer simulation is now very popular and powerful tool for simulation and analysis of some physical phenomena. In this thesis, thermal modeling and analysis using ANSYS program have been investigated for different boundary conditions. Different boundary conditions are for simulating the different real available environments. It is easy to modify the parameters of materials and the shape of LEDs, for the optimization of the thermal behavior of LEDs. The whole thesis is for analyzing the thermal behavior of GaN-based LEDs. From liquid crystal thermography method, we obtain the hot spot of the LED chip. From the simulation, we have a conclusion that the heat sink design and the ambient environments have significant effects on the thermal behavior of LEDs.