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Zr_(2)/Si_(0.75)Ge_(0.25)/Si 구조의 계면 및 전기적 특성에 미치는 열처리 온도의 영향 원문보기
(The) Effects of the Thermal Annealing Temperature on the Interfacial and Electrical Properties ofZr_(2)/Si_(0.75)Ge_(0.25)/Si Structures

  • 저자

    서승건

  • 학위수여기관

    고려대학교 대학원

  • 학위구분

    국내석사

  • 학과

    재료공학과

  • 지도교수

  • 발행년도

    2004

  • 총페이지

    ⅴ, 68p.

  • 키워드

    스퍼터링 상부전극 열처리;

  • 언어

    kor

  • 원문 URL

    http://www.riss.kr/link?id=T10070393&outLink=K  

  • 초록

    The scaling down of the gate oxide thickness has led to an interest for high-permittivity (high-k) materials having low leakage current, high thermal stability, and good interface properties comparable to Si/SiO_(2) interface. In addition, during the last decade, the silicon-germanium (SiGe) technology has paved the way for a new generation of high performance devices and circuits. However, conventional thermal oxidation of Si_(x)Ge_(1-x) causes the preferential oxidation of Si that occurs Ge-rich layers at the oxide/substrate interface and causes degradation of oxide properties. Therefore, some comparative results were reported on the structural and electrical characteristics of ZrO_(2) films on Si_(0.75)Ge_(0.25)/Si substrates, performed at different annealing conditions, relative to its use in SiGe metal-oxide-semiconductor (MOS) gate dielectric applications. It was investigated that ZrO_(2) thin films had been deposited by rf-magnetron sputtering with 120 W of the loaded rf power and 1 : 1 of the gas flow rate of O_(2) : Ar. Annealing processes have been performed ranging from 550 ℃ to 650 ℃ in O2 ambient. By utilizing various characterization tools, such as XRD, SEM, AFM, RBS, XPS, TEM, C-V characteristics, and I-V characteristics, it was reported that the morphological, stoichiometric, dielectric and electrical properties of ZrO_(2) thin films on Si_(0.75)Ge_(0.25)/Si substrate were measured and analized. It was found that the transient point of annealing temperature exists to form and grow the SiO_(2) layer rapidly in vicinity to 650 ℃. Zr-silicide was formed between ZrO_(2) and Si_(0.75)Ge_(0.25)/Si substrate at the annealing temperature below 650 ℃.


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