전자빔 조사가 IGZO 박막의 성질에 미치는 영향에 관한 연구
Properties of IGZO Thin Films Irradiated by Electron Beams with Various Energies
v, 69 p.
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ABSTRACT Properies of IGZO Thin Films Irradiated by Electron Beams with Various Energies - Department of Display Engineering, The Graduate School Hoseo University Asan, Korea (Supervised by professor Byung Seong Bae) In this study, we investigated the effects of the key parameters of high-energy electron-beam irradiation (HEEBI) on the optical, electrical, and structural properties of indium-gallium-zinc oxide(IGZO) films grown on glass substrates at room temperature by using radio-frequency magnetron sputtering techniques. Hall, photoluminescence, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy measurements revealed that p-type conductivity might appear in films HEEBI-treated at high energy and dose, which was attributed to not only the formation of oxygen interstitial and zinc vacancy acceptor defects but also the reduction of hydrogen-related donor defects in the IGZO films due to HEEBI treatment. X-ray diffraction analyses showed an increase in the halo peak intensity at around 34〫 with increasing electron-beam energy, indicating that all films prepared in this study were more crystallized at a higher energy despite their amorphous main structure.