본문 바로가기
HOME> 논문 > 논문 검색상세

학위논문 상세정보

전자빔 조사가 IGZO 박막의 성질에 미치는 영향에 관한 연구 원문보기
Properties of IGZO Thin Films Irradiated by Electron Beams with Various Energies

  • 저자

    정소현

  • 학위수여기관

    호서대학교 일반대학원

  • 학위구분

    국내석사

  • 학과

    디지털디스플레이공학과

  • 지도교수

    배병성

  • 발행년도

    2014

  • 총페이지

    v, 69 p.

  • 키워드

  • 언어

    kor

  • 원문 URL

    http://www.riss.kr/link?id=T13540960&outLink=K  

  • 초록

    ABSTRACT Properies of IGZO Thin Films Irradiated by Electron Beams with Various Energies - Department of Display Engineering, The Graduate School Hoseo University Asan, Korea (Supervised by professor Byung Seong Bae) In this study, we investigated the effects of the key parameters of high-energy electron-beam irradiation (HEEBI) on the optical, electrical, and structural properties of indium-gallium-zinc oxide(IGZO) films grown on glass substrates at room temperature by using radio-frequency magnetron sputtering techniques. Hall, photoluminescence, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy measurements revealed that p-type conductivity might appear in films HEEBI-treated at high energy and dose, which was attributed to not only the formation of oxygen interstitial and zinc vacancy acceptor defects but also the reduction of hydrogen-related donor defects in the IGZO films due to HEEBI treatment. X-ray diffraction analyses showed an increase in the halo peak intensity at around 34〫 with increasing electron-beam energy, indicating that all films prepared in this study were more crystallized at a higher energy despite their amorphous main structure.


 활용도 분석

  • 상세보기

    amChart 영역
  • 원문보기

    amChart 영역