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Investigation of improving solar cell efficiency by employing selective Emitter with large diameter(6") silicon wafer

  • 저자

    김일환

  • 학위수여기관

    세종대학교 대학원 전자공학과

  • 학위구분

    국내석사

  • 학과

    전자공학과 전자공학

  • 지도교수

    이수홍

  • 발행년도

    2014

  • 총페이지

    83

  • 키워드

    Laser Doping Etch Paste Selective Emitter Solar Cell Efficiency;

  • 언어

    kor

  • 원문 URL

    http://www.riss.kr/link?id=T13541121&outLink=K  

  • 초록

    The explosion of PV production across the globe in the past few years has shown the possibility for opening new renewable energy era, especially in solar as one of the promising energy sources. Though we are passing through the dimly lit tunnel of tough solar market, facing drop in prices and reorganization of solar market today, we can expect more bright future in the very near future for the increase in PV installation year by year and emerging new markets. One of the main objectives of today's solar cell research and manufacturing is to reduce cost per watt peak. This can be achieved not only by reducing the production cost of the cells but also by increasing the cell efficiency with only moderate raise of the cell production cost. Cell concepts such as the HIT cell of previous Sanyo or the IBC cell of Sunpower are concepts that generally achieve very high efficiencies, but suffer from increasing production costs. Currently, the standard cell process by applying screen printed front side electrode on top of a SiNx ARC and full area rear side metal contact dominates the PV market, and besides some companies are trying to increase cell efficiency with few additional processing steps. This work focuses on the improvement of the cell efficiency by adopting laser Doping and etch paste for fabrication of selective Emitter solar cells. These two methods allow selective emitter formation with low doping regions between fingers, enhancing blue response by lowering the surface recombinations. In this paper, we have carried out optimization of laser Doping and etch paste process. Laser Doping is an alternative to conventional thermal annealing to form PN juctions in silicon solar cells. The laser processing has many advantages such as simple and low temperature process, high throughput, and low cost of ownership. For fabrication of selective low sheet resistance regions, we have used phosphosilicate glass layer as an dopant source, which was produced after furnace diffusion. Etch paste method also has advantages such as good uniformity, high efficiency compared to other methods. In this paper, I-V measurement, IQE measurment and lifetime mapping analysis have been used to investigate the elelctrical and optical properties of the several batches of selective Emitter solar cells. We have achieved the efficiency of 18.88% and 19.05% by using the laser Doping and etch paste process, respectively. Although the cell efficiency in selective Emitter solar cell fabricated by using etch paste is better than that of the cell by laser Doping, the laser Doping can be applied to conventional manufacturing systems directly because the laser Doping needs only single additional step. On the other hand, for the case of etch paste, three more additional process steps are needed to form selective Emitter when compared with the laser Doping process. By comparing two methods for fabrication of selective Emitter solar cells, we have shown the laser Doping is more useful method for applying industrial solar cell fabrication.


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