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The Korean journal of ceramics v.3 no.3, 1997년, pp.177 - 181  

Chemical Vapor Deposition of Silicon Carbide Thin Films Using the Single Precursor 1,3-Disilabutane

Lee, Kyung-Won  
  • 초록

    Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$ -SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$ , at temperatures 900~ $100^{\circ}C$ . The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.


  • 주제어

    High vacuum chemical vapor deposition .   Single precursor .   Accurate stoichimetry.  

  • 참고문헌 (12)

    1. Heteroepitaxial Growth of Smooth and Continuous Diamond Thin Films on Silicon Substrates via High Quality Silicon Carbide Buffer Layers , H. Kawarada;T. Suesada;H. Nagasawa , Appl. Phys. Lett. / v.66,pp.583-585,
    2. I. N. Jung;G.-H. Lee;C.-H. Song , Korean Patent Appl. No. 92-4705 / v.,pp.,
    3. Low-Temperature Growth of 3C-SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material , K. Takahashi;S. Nishino;J. Saraie , J. Electrochem. Soc. / v.139,pp.3565-3571,
    4. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE , A. Ishizaka;Y. Shiraki , J. Electrochem. Soc. / v.133,pp.666-671,
    5. Characterization of Diamond Thin Films: Diamond Phase Identification, Surface Morphology and Defect Structures , B. E. Williams;J. T. Glass , J. Mater. Res. / v.4,pp.373-384,
    6. Epitaxial Growth of 3C-SiC on Si by Low-pressure Chemical Vapor Deposition , Y. Fujiwara;E. Sakuma;S. Misawa,;K. Endo;S. Yoshida , Appl. Phys. Lett. / v.49,pp.388-390,
    7. Optimum Semiconductors for High-Power Electronics , K. Shenai;R. S. Scott;B. J. Baliga , IEEE Trans. Electron Devices / v.ED-36,pp.1811-1823,
    8. Single-crystalline Epitaxial Cubic SiC Films Grown on (100) Si at 750℃ by Chemical Vapor Deposition , I. Golecki;F. Reidinger;J. Marti , Appl. Phys. Lett. / v.60,pp.1703-1705,
    9. Kinetics of SiC CVD: Surface Decomposition of Silacyclobutane and Methylsilane , A. D. Johnson;J. Perrin;J. A. Mucha;D. E. Ibbotson , J. Phys. Chem. / v.97,pp.12937-12948,
    10. Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface , T. Yoshinobu;H. Mitsui;Y. Tarui;T. Fuyuki;H. Matsunami , Jpn. J. Appl. Phys. / v.31,pp.L1580-L1582,
    11. Growth of Crystalline 3C-SiC on Si at Reduced Temperatures by Chemical Vapor Deposition from Silacyclobutane , A. J. Steckl;C. Yuan;J. P. Li;M. J. Loboda , Appl. Phys. Lett. / v.63,pp.3347-3349,
    12. Growth of Cubic SiC Films Using 1,3-Disilabutane , J. H. Boo;K.-S. Yu;Y. Kim;S. H. Yeon;I. N. Jung , Chem. Mater. / v.7,pp.694-698,

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  • 유규상 (1)

    1. 1996 "입방형 탄화규소 박막의 적층 성장" 韓國眞空學會誌 = Journal of the Korean Vacuum Society 5 (2): 133~138    
  • Kim, Yun-Soo (17)

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