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The Korean journal of ceramics v.3 no.3, 1997년, pp.213 - 217  

X-ray and Plasma Process Induced Damages to PLZT Capacitor Characteristics for DRAM Applications

Kim, Jiyoung  
  • 초록

    In this paper, the imparct of X-ray and plasma process-induced-damages to La doped Lead Zirconate Titanate (PLZT, (Pb1-xLa)(Zr0.5Ti0.5)O3) capacitor characteristics have been investigated from the viewpoint of gigabit scale dynamic random access memory (DRAM) applications. Plamsa damage causes asymmetric degradation on hysteresis characteristics of PLZT films. On the other hand, X-ray damage results in a symmetrical reduction of charge storage densities (Qc's) for both polarities. As La concentration increases in the films, the radiation hardness of PLZT films on X-ray and plasma exposures is improved. It is observed that the damaged devices are fully recovered by thermal annealing under oxygen ambient.


  • 주제어

    PLZT .   Ferroelectric capacitor .   DRAM .   Process-induced-damages.  

  • 참고문헌 (19)

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 저자의 다른 논문

  • 김지영 (4)

    1. 1997 "La 첨가가 DRAM 캐퍼시터용 PLZT 박막의 특성에 미치는 영향" 요업학회지 = Journal of the Korean Ceramic Society 34 (10): 1060~1066    
    2. 1998 "석영 기판 위에서 텅스텐 실리사이드 게이트 전극 형성에 관한 연구" 한국재료학회지 = Korean journal of materials research 8 (1): 80~84    
    3. 2000 "PZT 박막 캐퍼시터의 특성에 기여하는 PZT-전극계면층의 영향" 한국재료학회지 = Korean journal of materials research 10 (10): 684~690    

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