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Heterostructure 열처리에 의한 Bi 조성 제어가 SrBi$_2$Ta$_{2-x}$Nb$_x$O$_9$ 박막의 강유전 특성에 미치는 영향
The Effect of Bismuth Composition Controlled by Heat Treating Heterostructure on the Ferroelectric Properties of SrBi$_2$Ta$_{2-x}$Nb$_x$O$_9$ Thin Films

박윤백   (한국과학기술연구원 박막기술연구센터CC0186926  ); 이전국   (한국과학기술연구원 박막기술연구센터CC0186926  ); 정형진   (한국과학기술연구원 박막기술연구센터CC0186926  ); 박종완   (한양대학교 금속공학과UU0001519  );
  • 초록

    Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400 $\AA$ . As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100 $\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150 $\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400 $\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100 $\AA$ )/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$ C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.


  • 주제어

    SrBi $_2$Ta $_{2-x}$Nb $_x$O $_9$ .   Bi $_2$O $_3$ .   Ferroelectrics .   Perovskite structure .   Multilayer heterostructure .   Heat treatment .   r-f .   magetron sputtering.  

  • 참고문헌 (23)

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  • 박윤백 (1)

    1. 2000 "Role of the $Bi_2O_3\;in\;SrBi_2TaNbO_9/Bi_2O_3/SrBi_2TaNbO_9$ Heterostructure and Low Temperature Annealing Property" The Korean journal of ceramics 6 (3): 276~279    
  • 이전국 (36)

  • 정형진 (59)

  • 박종완 (69)

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