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Dielectric Properties of $Ta_2O_{5-X}$ Thin Films with Buffer Layers

Kim, In-Sung   (Division, Korea Electrotechnology Research InstituteCC0006250  ); Song, Jae-Sung   (Division, Korea Electrotechnology Research InstituteCC0006250  ); Yun, Mun-Soo   (Division, Korea Electrotechnology Research InstituteCC0006250  ); Park, Chung-Hoo   (Pusan National University, Professor, Department of Electrical EngineeringUU0000613  );
  • 초록

    The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$ . T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$ . Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$ Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23~39) and high leakage current density(10 $^{-3}$ ~10 $^{-4}$ (A/ $\textrm{cm}^2$ )), whereas relatively low dielectric constant (~15) and tow leakage current density(10 $^{-9}$ ~10 $^{-10}$ (A/ $\textrm{cm}^2$ )) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.


  • 주제어

    integrated passive device .   buffer layer .   capacitor .   $Ta_2O_{5-X}$ thin films .   dielectric properties .   capacitance vs voltage .   leakage current density vs electric field.  

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