본문 바로가기
HOME> 논문 > 논문 검색상세

논문 상세정보

Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막 성장과 열처리 효과
The Effect of Thermal Annealing and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy

윤석진   (조선대학교 화학교육과UU0001180  ); 정태수   (전북대학교 물리학과UU0001120  ); 이우선   (조선대학교 전기공학과UU0001180  ); 박진성   (조선대학교 신소재공학과UU0001180  ); 신동찬   (조선대학교 신소재공학과UU0001180  ); 홍광준   (조선대학교 물리학과UU0001180  ); 이봉주   (조선대학교 물리학과UU0001180  );
  • 초록

    Single crystal CuAlSe $_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe $_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe $_2$ thin films measured with Hall effect by van der Pauw method are 9.24 ${\times}$ 10 $^16$ cm $^-3$ and 295 cm $^2$ /V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe $_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10 $^-4$ eV/K)T $^2$ /(T + 155K). After the as-grown single crystal CuAlSe $_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe $_2$ thin films has been investigated by PL at 10 K. The native defects of V $\_$ cd/, V $\_$ se/, Cd $\_$ int/, and Se $\_$ int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe $_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe $_2$ /GaAs did not form the native defects because Al in single crystal CuAlSe $_2$ thin films existed in the form of stable bonds.


  • 주제어

    Hot wall epitaxy .   Single crystal thin film .   Hall effect .   Optical absorption .   Photoluminescence .   Point defect.  

  • 참고문헌 (21)

    1. LED properties of CuAlSe₂single crystal , A.M.Andriesh;N.N.Syrbu;M.S.Lovu;V.E.Tazlavan , Phys. Stat. Sol. / v.187,pp.83,
    2. Photoconductivity in CuAlSe₂ , S.Chichibu;S.Matsumoto;S.Shirakata;S.Isomura , Appl. Phys. Lett. / v.62,pp.3306,
    3. Study of the Band Edge in CuAlSe₂by photovoltaic effect , Moon Seog Jin , J. Phys. Chem. Solids / v.57,pp.1359,
    4. Photolumine-science and Photocondutivity measurements on CuGaSe₂ , L.Roa;J.C.Chervin;J.P.Itie;A.Polian;M.Gauthier;A.Chevy , Phys. Stat. Sol. / v.211,pp.455,
    5. Band diagram of the polycrystalline CdS/CuAlSe₂heterojunction , J.E.Genthe;R.E.Aldrich , Thin Solid Flims / v.9,pp.409,
    6. Y.P.Varshni , Physica / v.34,pp.149,
    7. B.D.Cullity , Elements of X-ray Diffractions / v.,pp.,
    8. Energy bands of CuAlSe₂in the chalcopyrite , J.T.Calow;D.L.Kirr;S.J.T.Owen , Thin Solid Flims / v.9,pp.409,
    9. ZnS 형광체 분말의 결정 결함에 따른 발광특성 , 박용규;성현호;조황신;양해석;이종찬;박대희 , 전기전자재료학회논문지 / v.13,pp.876,
         
    10. Raman scattering in novel CuAlSe₂crystals , L.Roa;J.C.Chervin;A.Chevy;M.Davila;P.grima;J.Gonzalez , Phys. Stat. Sol. / v.198,pp.99,
    11. Elizabeth,A.wood , Crystal Oriention manual / v.,pp.,
    12. GaAs(311)A 기판위에 성장된 탄소 도핑된 GaAs 에피층의 광여기 발광 , 조신호 , 전기전자재료학회논문지 / v.15,pp.208,
         
    13. Electronic properties of CuAlSe₂-based heterojunction Solar cells , J.E.Jaffe;Alex Zunger,P. , hysical Review B / v.29,pp.1882,
    14. Properties of CuAlSe₂single crystal thin film grown by LP-MOCVD , K.J.Hong;S.H.You , J. Appl. Phys. / v.90,pp.3894,
    15. The characterization of ZnSe/GaAs epilayers grown by hot wall epitaxy , Ravhi,S.Kummer;A.Sekar , J. alloys and compounds / v.312,pp.4,
    16. Band diagram of the polycrystalline CdS/CuAlSe₂heterojunction , V.A.Savchuk;B.V.Korzoun;D.I.Zhigunov , J. Crys. Growth / v.158,pp.385,
    17. Tetragonal distortion for $A^{I}$ · $B^{II}$ · $C_{2}^{III}$ chalcopyrite compounds , M.I.Alonso;J.Pascual;M.Garriga;Y.Kikuno;N.Yamamoto;K.Wakita , J. Appl. Phys. / v.88,pp.1923,
    18. InAs/GaAs self-organized quantum dots의 전기 광학적 특성 연구 , 배상혁;윤일구;서대식;명재민;이상열 , 전기전자재료학회논문지 / v.14,pp.246,
    19. H.Fujita , J. Phys. Soc. / v.20,pp.109,
    20. Photoacoustic spectra of CuAlSe₂ , Nobuyuki Yamamoto , J. of Applied Phy., new physics / v.15,pp.1909,
    21. CuAlSe₂and AgInSe₂: Preparation and property of single crystal , Y.Harada;M.Uchida;S.Matsumoto , J. Appl. Phys. / v.77,pp.1225,

 활용도 분석

  • 상세보기

    amChart 영역
  • 원문보기

    amChart 영역

원문보기

무료다운로드
  • NDSL :
  • 전기전자재료학회논문지 : 저널
유료다운로드

유료 다운로드의 경우 해당 사이트의 정책에 따라 신규 회원가입, 로그인, 유료 구매 등이 필요할 수 있습니다. 해당 사이트에서 발생하는 귀하의 모든 정보활동은 NDSL의 서비스 정책과 무관합니다.

원문복사신청을 하시면, 일부 해외 인쇄학술지의 경우 외국학술지지원센터(FRIC)에서
무료 원문복사 서비스를 제공합니다.

NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.

이 논문과 함께 출판된 논문 + 더보기