본문 바로가기
HOME> 논문 > 논문 검색상세

논문 상세정보

Preparation of Crystalline $Si_{1-x}Ge_x$ Thin Films by Pulsed Ion-Beam Evaporation

Yang, Sung-Chae   (Division of Electronics and Information, Chonbuk National UniversityUU0001120  );
  • 초록

    Thin films of single phase, polycrystalline silicon germanium (Si $_{1-x}$ Ge $_{x}$ ) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After irradiation of the targets by a pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si $_{1-x}$ Ge $_{x}$ , whose composition is close to those of the targets.rgets.


  • 주제어

    high deposition rate .   polycrystalline silicon germanium $Si_{1-x}Ge_x$ thin films .   pulsed ion-beam evaporation .   single phase .   room temperature.  

  • 참고문헌 (14)

    1. Y. Shimotori, M. Yokoyama, H. Isobe, S. Harada, K. Masugata and K. Yatsui, 'Preparation and characteristics of ZnS thin films by intense pulsed ion beam'l. Appl. Phys. , vol. 63, pp. 968-970, 1988 
    2. H. Suematsu, M. Sengiku, K. Kato, M. Mitome, K. Kimoto, Y. Matsui, W. Jiang and K. Yatsui, 'Photoluminescence properties of crystallized strontium aluminate thin films prepared by ion-beam evaporation', Thin Solid Films, vol. 407, pp. 136-138, 2002 
    3. S.C. Yang, A. Fazlat, H. Suematsu, W. Jiang and K. Yatsui, 'Characteristics of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation', Surface and Coatings Technology, vol. 169, pp. 636638, 2003 
    4. S.-C. Yang, H. Suematsu, W. Jiang and K. Yatsui, 'Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation' IEEE Trans. on Plasma Science, vol. 30, pp. 1816-1819, 2002 
    5. M. Okada,H. Kamioka, H. Matsuo, Y. Fukuda, S. Zaima, K. Kawamura and Y. Yasuda, 'Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing', Thin Solid Films, vol. 369, pp.130-133, 2000 
    6. K. Kato, Y. Ogura, M. Sengiku, K. Shinbo, F. Kaneko, Y. Oda and K. Yatsui, 'Luminescent Properties of $SrAl_2O_4$:Eu Thin Films Deposited by Intense Pulsed Ion-Beam Evaporation', Jpn. J. Appl. Phys. , vol. 40, pp. 1038-1041, 2001 
    7. H. Suematsu, K. Kitajima, I. Ruiz, M. Takeda, T. Suzuki, W. Jiang and K. Yatsui, 'Thermoelectric properties of crystallized boron carbide thin films prepared by ion-beam evaporation', Thin Solid Films, vol. 407, pp. 132-135, 2002 
    8. D. K. Nayak, J. C. S. Woo, J. S. Park, K-L. Wan, and K P. acWilliams, 'Enhancement-mode quantumwell GexSi,_x PMOS', IEEE Electron Device Lett. , vol. 12, pp. 154-156,1991 
    9. K. Kitajima, T. Suzuki, W. Jiang and K. Yatsui, 'Preparation of B4CThin Film by Intense Pulsed IonBeam Evaporation', lpn. J. Appl. Phys. , vol. 40, pp. 1030-1034, 2001 
    10. C. L. Chang and J. C. Sturm, 'Suppression of boron penetration by polycrystalline Sil- x_yGexCy in metaloxide-semiconductor structures', Appl. Phys. Lett. , vol. 74, pp. 2501-2503, 1999 
    11. M. Sengiku, Y. Oda, W. Jiang, K. Yatsui, K. Kato, K. hinbo and F. Kaneko, 'Preparation of $SrAl_2O_4$:Eu Phosphor Thin Films by Intense Pulsed Ion-Beam Evaporation', Jpn. J. Appl. Phys. , vol. 40, pp. 1035-1037, 2001 
    12. H. Suematsu, K. Kitajima, T. Suzuki, W. Jiang, K. Kurashima, Y. Bando and K. Yatsui, 'Preparation of polycrystalline boron carbide thin films at room emperature by pulsed ion-beam evaporation', Appl. Phys. Lett. , vol. 80, pp. 1153-1155, 2002 
    13. K. Yatsui, 'Industrial Applications of Pulse Power and Particle Beams', Laser and Particle Beams, vol. 7, pp. 733-741,1989 
    14. T. E. Whall and E. H. C. Parker, 'Si/SiGe/Si pMOS Performance-alloy scattering and other considerations', Thin Solid Films, vol. 368, pp. 297-305, 2000 

 저자의 다른 논문

  • 양성채 (8)

    1. 2004 "ICP 식각 시스템에 의한 초전도 스트립 라인의 임계 특성 분석" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers 17 (7): 782~787    
    2. 2004 "Relationship between Secondary Electron Emissions and Film Thickness of Hydrogenated Amorphous Silicon" KIEE international transactions on electrophysics and applications c4 (4): 185~189    
    3. 2008 "저온프로세스를 이용한 고분자필름의 플라즈마 표면처리" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers 21 (5): 486~491    
    4. 2009 "플라즈마 CVD 법을 이용한 대면적 균일한 비정질 탄소 막 증착" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers 22 (5): 411~414    
    5. 2011 "효율적인 학생지도를 위한 비교과영역 활동 관리 체계" 공학교육 = Engineering education 18 (6): 16~19    
    6. 2017 "플라즈마 표면처리를 이용한 YBCO Coated Conductor의 Ag 박막층 증착에 관한 연구" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers 30 (1): 32~36    
    7. 2017 "EBSD를 이용한 1, 2차 용융흔 결정립의 방위 비교 분석" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers 30 (11): 728~733    

 활용도 분석

  • 상세보기

    amChart 영역
  • 원문보기

    amChart 영역

원문보기

무료다운로드
  • NDSL :
유료다운로드

유료 다운로드의 경우 해당 사이트의 정책에 따라 신규 회원가입, 로그인, 유료 구매 등이 필요할 수 있습니다. 해당 사이트에서 발생하는 귀하의 모든 정보활동은 NDSL의 서비스 정책과 무관합니다.

원문복사신청을 하시면, 일부 해외 인쇄학술지의 경우 외국학술지지원센터(FRIC)에서
무료 원문복사 서비스를 제공합니다.

NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.

이 논문과 함께 출판된 논문 + 더보기