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Li-doped p-type ZnS Grown by Molecular Beam Epitaxy

Lee Sang-Tae    (Div. of Mechatronics Eng., Korea Maritime Univ.  );
  • 초록

    Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately $3{\times}10^{15}\;cm^{-3}$ .


  • 주제어

    Li-doped ZnS .   Net acceptor concentration .   Molecular beam epitaxy.  

  • 참고문헌 (15)

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