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Separation and Quantification of Parasitic Resistance in Nano-scale Silicon MOSFET

Lee Jun-Ha    (Dept. of Computer System Engineering, Sangmyung University   ); Lee Hoong-Joo    (Dept. of Computer System Engineering, Sangmyung University   ); Song Young-Jin    (Information&Computer Science Major, Konyang University   ); Yoon Young-Sik    (Mechanical Engineering Major, Konyang University  );
  • 초록

    The current drive in a MOSFET is limited by the intrinsic channel resistance. All other parasitic elements in a device structure perform significant functions leading to degradation in the device performance. These other resistances must be less than 10 $\%$ -20 $\%$ of the channel resistance. To meet the necessary requirements, the methodology of separation and quantification of those resistances should be investigated. In this paper, we developed an extraction method for the resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that gathers below the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.


  • 주제어

    extraction .   nano-scale MOSFET .   parasitic resistance .   quantification .   separation.  

  • 참고문헌 (17)

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  • 이흥주 (27)

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