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A 20-GHz Miniaturized Ring Hybrid Circuit Using TFMS on Low-Resistivity Silicon

Lee Sang-No    (Dept. of Electrical and Electronic Engineering, Yonsei University   ); Lee Joon-Ik    (Dept. of Mechanical Engineering, Yonsei University   ); Yook Jong-Gwan    (Dept. of Electrical and Electronic Engineering, Yonsei University   ); Kim Yong-Jun    (Dept. of Mechanical Engineering, Yonsei University  );
  • 초록

    In this paper, a miniaturized ring hybrid circuit is characterized based on a thin film microstrip (TFMS) on low-resistivity silicon. In order to obtain low-loss characteristics, a polyimide layer with 50 $\mu$ m thickness is spin-coated onto the silicon to be used for the substrate. First, propagation characteristics of TFMS lines consisting of the ring hybrid circuit are presented. Then, a ring hybrid circuit based on TFMS is featured by employing the triple concentric circle approach for miniaturization. Triple concentric circle lines with $\lambda$ $_{g}$ /4 or 3 $\lambda$ $_{g}$ /4 line lengths are implemented on the surface of the polyimide by circularly meandering to reduce the circuit size of the designed ring hybrid. Good agreement between measured and simulated results is obtained.


  • 주제어

    Low-resistivity silicon .   Miniaturization .   Polyimide layer .   Ring hybrid .   Thin film microstrip (TFMS).  

  • 참고문헌 (8)

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