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Electrical Properties of DC Sputtered Titanium Nitride Films with Different Processing Conditions and Substrates

Jin, Yen   (Department of Materials Science and Engineering, Korea Advanced Institute of Science and TechnologyUU0001375  ); Kim, Young-Gu   (Department of Materials Science and Engineering, Korea Advanced Institute of Science and TechnologyUU0001375  ); Kim, Jong-Ho   (Department of Materials Science and Engineering, Korea Advanced Institute of Science and TechnologyUU0001375  ); Kim, Do-Kyung   (Department of Materials Science and Engineering, Korea Advanced Institute of Science and TechnologyUU0001375  );
  • 초록

    Deposition of TiN $_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N $_{2}$ gas on the resistivity of TiN $_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO $_{2}$ wafer were used to explore the effect of substrate. The phase of TiN $_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN $_{x}$ film having lowest resistivity was discussed.


  • 주제어

    TiN films .   Ceramic coating .   DC sputtering .   Resistivity.  

  • 참고문헌 (9)

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 저자의 다른 논문

  • Kim, Young-Gu (1)

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  • Kim, Jong-Ho (5)

  • 김도경 (21)

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