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ETRI journal v.27 no.4, 2005년, pp.439 - 445  

Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications

Mheen, Bong-Ki    (Basic Research Laboratory, ETRI   ); Song, Young-Joo    (Basic Research Laboratory, ETRI   ); Kang, Jin-Young    (Basic Research Laboratory, ETRI   ); Hong, Song-Cheol    (Department of EECS, KAIST  );
  • 초록

    We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$ ) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.


  • 주제어

    SiGe .   strained-Si .   strained-SiGe .   hetero-structure MOSFET.  

  • 참고문헌 (19)

    1. The Impact of Device Scaling on the Current Fluctuations in MOSFET's , Tsai, Ming-Horn;Ma, Tso-Ping , IEEE Trans. Electron Devices / v.41,pp.2061-2068,
    2. Analysis of Si/SiGe Channel pMOSFETs for Deep-Submicron Scaling , Li, P.W.;Liao, W.M. , Solid-State Electronics / v.46,pp.39-44,
    3. DC and RF Characteristics of $Si_{0.8}Ge_{0.2}$ pMOSFETs: Enhanced Operation Speed and Low 1/f Noise , Song, Y.J.;Shim, K.H.;Kang, J.Y.;Cho, K.I. , ETRI J. / v.25,pp.203-209,
    4. Effective Mobilities in Pseudomorphic Si/SiGe/Si p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors with Thin Silicon Capping Layers , Palmer, M.J.;Braithwaite, G.;Grasby, T.J.;Phillips, P.J.;Prest, M.J.;Parker, E.H.C.;Whall, T.E.;Parry, C.P.;Waite, A.M.;Evans, A.G.R.;Roy, S.;Watling, J.R.;Kaya, S.;Asenov, A. , Appl. Phys. Lett. / v.78,pp.1424-1426,
    5. Hole Confinement and its Impact on Low-Noise in SiGe pFETs on Sapphire , Mathew, S.J.;Niu, G.;Dbbelday, W.B.;Cressler, J.D.;Ott, J.A.;Chu, J.O.;Mooney, P.M.;Kavanagh, K.L.;Meyerson, B.S.;Lagnado, I. , IEDM Tech. Dig. / v.,pp.815-818,
    6. Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to $1300^{\circ}K$ , Dismukes, J.P.;Ekstrom, L.;Steigmeier, E.F.;Kudman, I.;Beers, D.S. , J. Appl. Phys. / v.35,pp.2899-2907,
    7. Measurement of the Effect of Self-Heating in Strained-Silicon MOSFETs , Jenkins, K.A.;Rim, K. , Electron Device Lett. / v.23,pp.360-362,
    8. Band Structure, Deformation Potentials, and Carrier Mobility in Strained Si, Ge, and SiGe Alloys , Fischetti, M.V.;Laux, S.E. , J. of Applied Physics / v.80,pp.2234-2252,
    9. Enhanced Performance in Sub-100 nm CMOSFETs Using Strained Epitaxial Silicon-Germanium , Yeo, Y.C.;Lu, Q.;King, T.J.;Hu, C.;Kawashima, T.;Oishi, M.;Mashiro, S.;Sakai, J. , IEDM Technical Digest / v.,pp.753-756,
    10. Comparison of Deep-Submicrometer Conventional and Retrograde n-MOSFETs , Ma, S.T.;Brews, J.R. , IEEE Trans. Electron Devices / v.47,pp.1573-1579,
    11. Band Offset Induced Threshold Variation in Strained-Si nMOSFETs , Goo, Jung-Suk;Takamura, Qi Xiang;Arasnia, Y.;Paton, F.;Besser, E.N.;Pan, P.;Ming-Ren Lin, J. , Electron Device Lett. / v.24,pp.568-570,
    12. High-Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture , Olsen, S.H.;O'Neill, A.G.;Driscoll, L.S.;Kwa, K.S.K.;Chattopadhyay, S.;Waite, A.M.;Tang, Y.T.;Evans, A.G.R.;Norris, D.J.;Cullis, A.G.;Paul, D.J.;Robbins, D.J. , IEEE Trans. Electron Devices / v.50,pp.1961-1969,
    13. Performance Projections of Scaled CMOS Devices and Circuits with Strained Si-on-SiGe Channels , Fossum, J.G.;Zhang, Weimin , IEEE Trans. Electron Devices / v.50,pp.1042-1049,
    14. The International Technology Roadmap for Semiconductor , / v.,pp.,
    15. A Dual-Mode 2.4-GHz CMOS Transceiver for High-Rate Bluetooth Systems , Hyun, Seok-Bong;Tak, Geum-Young;Kim, Sun-Hee;Kim, Byung-Jo;Ko, Jin-Ho;Park, Seong-Su , ETRI J. / v.26,pp.229-240,
    16. Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers , Kim, Cheon-Soo;Kim, Sung-Do;Park, Mun-Yang;Yu, Hyun-Kyu , ETRI J. / v.25,pp.195-202,
    17. On the Origin of the LF Noise in Si/Ge MOSFETs , Ghibaudo, G.;Chroboczek, J. , Solid State Electron. / v.46,pp.393-398,
    18. SiGe-Channel Heterojunction p-MOSFET’s , Verdonckt-Vandebroek, S.;Crabbe, E.F.;Meyerson, B.S.;Harame, D.L.;Restle, P.J.;Stork, J.M.C.;Johnson, J.B. , IEEE Trans. Electron Devices / v.41,pp.90-101,
    19. Nanoscale Thermal Transport , Cahill, D.G.;Ford, W.K.;Goodson, K.E.;Mahan, G.D.;Majumdar, A.;Maris, H.J.;Merlin, R.;Phillpot, S.R. , J. Appl. Phys. / v.93,pp.793-818,

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