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ETRI journal v.27 no.3, 2005년, pp.304 - 311  

A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs

Lim, Jong-Won    (Basic Research Laboratory, ETRI   ); Ahn, Ho-Kyun    (Basic Research Laboratory, ETRI   ); Ji, Hong-Gu    (Basic Research Laboratory, ETRI   ); Chang, Woo-Jin    (Basic Research Laboratory, ETRI   ); Mun, Jae-Kyoung    (Basic Research Laboratory, ETRI   ); Kim, Hae-Cheon    (Basic Research Laboratory, ETRI   ); Cho, Kyoung-Ik    (Basic Research Laboratory, ETRI  );
  • 초록

    We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$ . The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$ ) with sample A (dry etching for the $SiN_x$ ), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.


  • 주제어

    GaAs .   PHEMT .   gate .   recess .   cut-off frequency .   maximum oscillation frequency.  

  • 참고문헌 (15)

    1. Influence of Parasitic Capacitances on the Performance of Passivated InAlAs/InGaAs HEMTs in the Millimeter Wave Range , Schuler, O.;Fourre, H.;Fauquembergue, R.;Cappy, A. , 8th Int’l Conf. on Indium Phosphide and Related Materials / v.,pp.646,
    2. Semiconductor Devices for RF Applications: Evolution and Current Status , Schwierz, F.;Liou, J.J. , Microelectronics Reliability / v.41,pp.145-168,
    3. GaAs High-Speed Devices , Chang, C.Y.;Kai, F. , / v.,pp.,
    4. Application of GaAs Discrete p-HEMTs in Low Cost Phase Shifters and QPSK Modulators , Kamenopolsky, Stanimir D. , ETRI J. / v.26,pp.307-314,
    5. Pseudomorphic $In_{0.52}Al_{0.48}As/_{In0.7}Ga_{0.3}As$ HEMTs with an Ultrahigh $f_T$ of 562 GHz , Yamashita, Y.;Endoh, A.;Shinohara, K.;Hikosaka, K.;Matsui, T.;Hiyamizu, S.;Mimura, T. , IEEE Electron Device Lett. / v.23,pp.573-575,
    6. Ultra Low Noise Characteristics of AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs with Wide Head T-shaped Gate , Lee, J.H.;Yoon, H.S.;Park, C.S. , IEEE Electron Device Lett. / v.16,pp.271-273,
    7. Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz , Lee, J.H.;Yoon, H.S.;Park, B.S.;Park, C.S.;Choi, S.S.;Pyun, K.E. , ETRI J. / v.18,pp.171-179,
    8. Device Characteristics of AlGaAs/InGaAs HEMTs Fabricated by Inductively Coupled Plasma Etching , Lee, J.H.;Yoon, H.S.;Shim, J.Y.;Kim, H. , Thin Solid Films / v.435,pp.139-144,
    9. Dry Etching Bilayer and Trilevel Resist Systems for Submicron Gate Length GaAs Based High Electron Mobility Transistors for Power and Digital Applications , Ren, F.;Pearton, S.J.;Tennant, D.M.;Resnick, D.J.;Abernathy, C.R.;Kopf, R.F.;Wu, C.S.;Hu, M.;Pao, C.K.;Paine, B.M.;Wang, D.C.;Wen, C.P. , J. of Vacuum Science and Technology B / v.10,pp.2949-2953,
    10. Effect of the T-gate on the Performance of Recessed HEMTs. A Monte Carlo Analysis , Mateos, J.;Gonzalez, T.;Pardo, D.;Hoel, V.;Cappy, A. , Semiconductor Science and Technology / v.14,pp.864-870,
    11. Improvement of Breakdown Characteristics of a GaAs Power Field-Effect Transistor Using $(NH_4)_2S_x$ Treatment , Lee, J.L.;Kim, D.;Maeng, S.J.;Park, H.H.;Kang, J.Y.;Lee, Y.T. , J. of Applied Physics / v.73,pp.3539-3542,
    12. Gate Orientation Dependence of InGaAs/AlGaAs High Electron Mobility Transistors Formed by Wet Recess Etching , Ohshima, T.;Yoshida, M.;Shigemasa, R.;Tsunotani, M.;Kimura, T. , Japanese J. of Applied Physics / v.39,pp.5052-5056,
    13. Study of the Fabrication of PHEMTs for a 0.1 μm Scale ${\Gamma}$-gate Using Electron Beam Lithography: Structure, Fabrication, and Characteristics , Kim, H.S.;Lim, B.O.;Kim, S.C.;Lee, S.D.;Shin, D.H.;Rhee, J.K. , Microelectronic Eng. / v.63,pp.417-431,
    14. Innovative Nitride Passivation for Pseudomorphic GaAs HEMTs and Impact on Device Performance , Chou, Y.C.;Nam, P.;Li, G.P.;Lai, R.;Lim, H.K.;Grundbacher, R.;Ahlers, E.;Ra, Y.;Xu, Q.;Biedenbender, M.;Oki, A. , IEEE 40th Annual Int’l Reliability Physics Symp. / v.,pp.235-240,
    15. HBT vs. PHEMT vs. MESFET: What’s Best and Why , Pavlidis, D. , GaAs MANTECH Conf. Digest of Papers / v.,pp.157-160,

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