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ETRI journal v.27 no.1, 2005년, pp.75 - 80  

An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator

Kim, Young-Gi    (Department of Data Communication, Anyang University   ); Kim, Chang-Woo    (College of Electronic and Information Engineering, Kyung Hee University   ); Kim, Seong-Il    (Basic Research Laboratory, Electronics and Telecommunications Research Institute   ); Min, Byoung-Gue    (Basic Research Laboratory, Electronics and Telecommunications Research Institute   ); Lee, Jong-Min    (Basic Research Laboratory, Electronics and Telecommunications Research Institute   ); Lee, Kyung-Ho    (Basic Research Laboratory, Electronics and Telecommunications Research Institute  );
  • 초록

    This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.


  • 주제어

    MMIC .   oscillator .   X-band .   HBT.  

  • 참고문헌 (18)

    1. A 20-GHz InP-HBT Voltage-Controlled Oscillator with Wide Frequency Tuning Range , Djahanshahi, H.;Saniei, N.;Voinigescu, S.P.;Maliepaard, M.C.;Salama, C.A.T. , IEEE Trans. Microwave Theory Tech. / v.49,pp.1566-1572,
    2. A Ku Band InGaP-GaAs HBT MMIC VCOs with Balanced and Differential Topologies , Beak, D.H.;Kim, J.G.;Kim, D.D.;Hong, S. , IEEE Trans. Microwave Theory Tech. / v.52,pp.1353-1559,
    3. Microwave Transistor Amplifiers , Gonzales, G. , / v.,pp.,
    4. Some Basic Characteristics of Broadband Negative Resistance Oscillator Circuits , Kurokawa, K. , Bell System Technical J. / v.48,pp.1937-1955,
    5. A K-Band InGaP/GaAs HBT Balanced MMIC VCO , Kim, J.G.;Beak, D.H.;Jeon, S.;Park, J.W.;Hong, S. , IEEE Microwave and Wireless Components Lett. / v.13,pp.478-480,
    6. GaInP/GaAs HBT’s for High-Speed Integrated Circuit Applications , Ho, W.J.;Chang, M.F.;Sailer, A.;Zampardi, P.;Deakin, D.;McDermermott, B.;Pierson, R.;Higgins, J.A.;Waldrop, J. , IEEE Electron Device Lett. / v.14,pp.572-574,
    7. High-Speed, Low-Noise InGaP/GaAs Heterojunction Bipolar Transistors , Fresina, M.T.;Ahmari, D.A.;Mars, P.J.;Hartmann, Q.J.;Feng, M.;Stillman, G.E. , IEEE Electron Device Lett. / v.161,pp.540-554,
    8. Impact of 1/f Noise in Ka-Band InGaP/GaAs HBT Frequency Sources , Heins, M.S.;Juneja, T.;Caruth, D.;Hattendorf, M.;Feng, M. , IEEE MTT-S Int. Microwave Symp. Dig. / v.,pp.1209,
    9. Low Phase Noise Ka-Band VCOs Using InGaP/GaAs HBTs and Coplanar Waveguide , Heins, M.S.;Barlage, D.W.;Fresina, M.T.;Ahmari, D.A.;Hartmann, Q.J.;Stillman, G.E.;Feng, M. , IEEE MTT-S Int. Microave Symp. Dig. / v.,pp.255,
    10. dc, rf, and Noise Characteristics of Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistors , Hong, B.W.P.;Song, J.I.;Palmstrom, C.J.;Gaag, B.V.;Chough, K.B.;Hayes, J.R. , IEEE Trans. Electron Devices. / v.41,pp.19-25,
    11. Extremely Low Noise InGaP/GaAs HBT Oscillator at C-Band , Perez, S.;Floriot, D.;Maurin, P.;Bouquet, P.;Gutierrez, P.M.;Obregon, J.;Delage, S.L. , Electronics Lett. / v.34,pp.813-814,
    12. A Highly-Tunable 12 GHz Quadrature LC-VCO in SiGe-BiCMOS Process , Coban, A.L.;Ahmed, K.;Chang, C. , Digest of Technical Paper, Symp. on VLSI / v.,pp.119,
    13. Fully Integrated 10 GHz CMOS VCO , Do, M.A.;Zhao, R.;Yeo, K.S.;Ma, J.G. , Electronics Lett. / v.37,pp.1021-1023,
    14. A Coplanar Waveguide InAlAs/InGaAs HBT Monolithic Ku-Band VCO , Kobayashi, K.W.;Tran, L.T.;Oki, A.K.;Blok, T.;Streit, D.C. , IEEE Microwave and Guided Wave Lett. / v.5,pp.311-312,
    15. A Low-Noise Ku-Band AlGaAs/GaAs HBT Oscillator , Hayama, N.;LeSage, S.R.;Masihian, M.;Honjo, K. , IEEE MTT-S Int. Microwave Symp. Dig. / v.2,pp.679,
    16. A Quenchable GaAs HBT X-Band VCO for Switched Band Synthesizer Architectures , Kobayashi, K.W.;Smith, D.M.;Kau, C.P.;Sharma, A.K.;Allen, B.R.;Streit, D.C. , IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig. / v.,pp.107,
    17. A Low Phase Noise X-Band MMIC GaAs MESFET VCO , Lee, C.H.;Han, S.;Matinpour, B.;Laskar, J. , IEEE Microwave and Guided Wave Lett. / v.10,pp.325-327,
    18. Development of a High-Power and High-Efficiency HBT MMIC VCO , Lee, C.H.;Sutono, A.;Laskar, J. , IEEE Radio and Wireless Conf. Dig. / v.,pp.157,

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  • Min, Byoung-Gue (9)

  • Lee, Jong-Min (11)

  • Lee, Kyung-Ho (10)

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