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ETRI journal v.27 no.1, 2005년, pp.118 - 121   피인용횟수: 1

Low-Temperature Growth of $SiO_2$ Films by Plasma-Enhanced Atomic Layer Deposition

Lim, Jung-Wook    (Basic Research Laboratory, ETRI   ); Yun, Sun-Jin    (Basic Research Laboratory, ETRI   ); Lee, Jin-Ho    (Basic Research Laboratory, ETRI  );
  • 초록

    Silicon dioxide ( $SiO_2$ ) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$ , showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.


  • 주제어

    $SiO_2$ plasma-enhanced atomic layer deposition (PEALD) .   C-V .   Poole-Frenkel.  

  • 참고문헌 (12)

    1. Investigation of Electrical Conduction in Carbon-Doped Silicon Oxide Using a Voltage Ramp Method , Yiang, K.Y.;Yoo, W.J.;Guo, Q.;Krishnamoothy, A. , Appl. Phys. Lett. / v.83,pp.524-526,
    2. Plasma Enhanced Atomic Layer Deposition of Zirconium Oxide Using Tetrakis (Ethylmethylamino) Zirconium and Oxygen , Yun, S.J.;Lim, J.W.;Lee, J.H. , Electrochem. Solid-State Lett. / v.7,pp.F81-F84,
    3. Increment of the Dielectric Constant of $Ta_2O_5$ Thin Films by Retarding Interface Oxide Growth on Si Substrates , Song, H.J.;Lee, C.S.;Kang, S.W. , Electrochem. Solid-State Lett. / v.4,pp.F13-F14,
    4. Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition , Lim, J.W.;Yun, S.J. , Electrochem. Solid-State Lett. / v.7,pp.F45-F48,
    5. Low Temperature Deposition of Aluminum Oxide on Polyethersulfone Substrate Using Plasma Enhanced Atomic Layer Deposition , Yun, S.J.;Lim, J.W.;Lee, J.H. , Electrochem. Solid-State Lett. / v.7,pp.C13-C15,
    6. Atomic Layer Deposition of $SiO_2$ at Room Temperature Using NH3-catalyzed Sequential Surface Reactions , Klaus, J.W.;George, S.M. , Surface Science / v.447,pp.81-90,
    7. Characteristics of $TiO_2$ Films Prepared by Atomic Layer Deposition with and without Plasma , Lim, J.W.;Yun, S.J.;Lee, J.H. , Electrochem. Solid-State Lett. / v.7,pp.F23-F76,
    8. Investigation of Inductively Coupled Plasma Gate Oxide on Low Temperature Polycrystalline Silicon TFTs , Tseng, C.H.;Chang, T.K.;Chu, F.T.;Shieh, J.M.;Dai, B.T.;Cheng, H.C. , IEEE Electron Device Lett. / v.23,pp.333-335,
    9. Growth of $SiO_2$ at Room Temperature with the Use of Catalyzed Sequential Half-Reactions , Klaus, J.W.;Sneh, O.;George, S.M. , Science / v.278,pp.1934-1936,
    10. Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs , Lim, J.W.;Yun, S.J.;Kim, Y.H.;Sohn, C.Y.;Lee, J.H. , Electrochem. Solid-State Lett. / v.7,pp.G185-G187,
    11. Atomic Layer Deposition of Zirconium Titanium Oxide from Titanium Isopropoxide and Zirconium Chloride , Rahtu, A.;Ritala, M.;Leskela, M. , Chem. Mater. / v.13,pp.1528-1532,
    12. Characteristics of $ZrO_2$ Gate Dielectric Deposited Using Zr tbutoxide and $Zr(NEt_2)_4$ Precursors by Plasma Enhanced Atomic Layer Deposition Method , Kim, Y.;Koo, J.;Han, J.;Choi, S.;Jeon, H.;Park, C.G. , J. Appl. Phys. / v.92,pp.5443-5447,
  • 이 논문을 인용한 문헌 (1)

    1. Kim, Young-Keun ; Kwon, Kwang-Ho 2011. "A Study of Al2O3 Thin Films Etching Characteristics Using Inductively Coupled BCl3/Ar Plasma" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, 24(6): 445~448     

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