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Analysis and Calibration of Transient Enhanced Diffusion for Indium Impurity in Nanoscale Semiconductor Devices

Lee Jun-Ha    (Dept. of Computer System Engineering, Sangmyung University   ); Lee Hoong-Joo    (Dept. of Computer System Engineering, Sangmyung University  );
  • 초록

    We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.


  • 주제어

    calibration .   indium impurity .   nanoscale .   transient enhanced diffusion.  

  • 참고문헌 (19)

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  • 이 논문을 인용한 문헌 (1)

    1. 2005. "" KIEE international transactions on electrophysics and applications, c5(2): 76~80     

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