트랜치 에미터 전극을 이용한 수직형 NPI 트랜치 게이트 IGBT의 전기적 특성 향상 연구
Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode
In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.
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이 논문을 인용한 문헌 (2)
- Shin, Ho-Hyun ; Lee, Han-Sin ; Sung, Man-Young 2007. "A Study on the Breakdown Voltage Characteristics with Process and Design Parameters in Trench Gate IGBT" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, 20(5): 403~409
- Lee, Jong-Seok ; Kyoung, Sin-Su ; Kang, Ey-Goo ; Sung, Man-Young 2008. "A Study on the 1,700 V Rated NPT Trench IGBT Analysis by PIN Diode - PNP Transistor Model" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, 21(10): 889~895
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