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Transactions on electrical and electronic materials v.11 no.3, 2010년, pp.120 - 125  
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A Study on Distributions of Boron Ions Implanted by Using B and BF2 Dual Implantations in Silicon

Jung, Won-Chae    (Department of Electronic Engineering, Kyonggi University  );
  • 초록

    For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$ . 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$ . For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$ , respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ( $B^+$ and ${BF_2}^+$ ) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.


  • 주제어

    B .   $BF_2$ .   F .   Dual implantations .   Secondary ion mass spectrometry .   Computer simulation .   Current-voltage .   Capacitance-voltage.  

  • 이미지/표/수식 (23)

    • Three different formations of p-n junctions fabricated by using B<sup>+</sup>, BF<sub>2</sub> <sup>+</sup> and dual implantations.
    • Experimental conditions for SIMS measurements of <sup>11</sup>B profiles.
    • Implanted boron profiles measured using secondary ion mass spectrometry.
    • Comparison of <sup>11</sup>B implanted profiles with secondary ion mass spectrometry (SIMS) and simulated data for the boron profiles.
    • Comparison of BF<sub>2</sub> implanted profiles with secondary ion mass spectrometry (SIMS) and simulated data for the boron profiles.
    • Comparison of dual (BF<sub>2</sub> and B) implanted profiles with secondary ion mass spectrometry (SIMS) and simulated data for the boron profiles.
    • The calculated B moments of SIMS and simulated data of UT-Marlowe program.
    • The calculated B moments of annealed SIMS and simulated data of ICECREM program after annealing.
    • Annealed boron (<sup>11</sup>B) profiles measured by using secondary ion mass spectrometry.
    • Annealed boron (<sup>11</sup>B) secondary ion mass spectrometry (SIMS) data by using B implantation.
    • Annealed boron (<sup>11</sup>B) secondary ion mass spectrometry (SIMS) data by using BF<sub>2</sub> Implantation.
    • Annealed boron (<sup>11</sup>B) secondary ion mass spectrometry (SIMS) data by using dual (BF<sub>2</sub>+B) Implantations.
    • Implanted and annealed F profiles in silicon by using secondary ion mass spectrometry.
    • Simulated F profiles in BF<sub>2</sub> and dual implanted silicon using UT-Marlowe .
    • Experimental conditions for SIMS measurements of <sup>19</sup>F profiles.
    • Current -voltage characteristics of three p-n junction diodes.
    • Capacitance -voltage characteristics of three p-n junction diodes.

    논문관련 이미지

  • 참고문헌 (16)

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