본문 바로가기
HOME> 논문 > 논문 검색상세

논문 상세정보

한국재료학회지 = Korean journal of materials research v.22 no.4, 2012년, pp.202 - 206   SCOPUS
본 등재정보는 저널의 등재정보를 참고하여 보여주는 베타서비스로 정확한 논문의 등재여부는 등재기관에 확인하시기 바랍니다.

Silicide Formation of Atomic Layer Deposition Co Using Ti and Ru Capping Layer

Yoon, Jae-Hong    (School of Electrical and Electronics Engineering, Yonsei University   ); Lee, Han-Bo-Ram    (School of Electrical and Electronics Engineering, Yonsei University   ); Gu, Gil-Ho    (Department of Materials Science and Engineering, POSTECH   ); Park, Chan-Gyung    (Department of Materials Science and Engineering, POSTECH   ); Kim, Hyung-Jun    (School of Electrical and Electronics Engineering, Yonsei University  );
  • 초록

    $CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ( $Co(iPr-AMD)_2$ ) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ( $50\;{\mu}{\Omega}cm$ ). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$ .


  • 주제어

    atomic layer deposition .   cobalt .   silicide .   capping layer .   rapid thermal annealing.  

  • 참고문헌 (18)

    1. H. Iwai, T. Ohguro and S. Ohmi, Microelectron. Eng., 60, 157 (2002). 
    2. H. Y. Lin, S. L. Wu, S. J. Chang, Y. P. Wang, Y. M. Lin and C. W. Kuo, Semicond. Sci. Technol., 24, 015015 (2009) 
    3. H. S. Rhee, B. T. Ahn and D. K. Sohn, J. Appl. Phys., 86, 3452 (1999). 
    4. H. -B. -R. Lee and H. Kim, Electrochem. Solid State Lett., 9, G323 (2006). 
    5. J. Yoon, H. -B. -R. Lee, D. Kim, T. Cheon, S. -H. Kim and H. Kim, J. Electrochem. Soc., 158, H1179 (2011). 
    6. H. -B. -R. Lee, J. Y. Son and H. Kim, Appl. Phys. Lett., 90, 213509 (2007). 
    7. H. Kim, Thin Solid Films, 519, 6639 (2011). 
    8. H. -B. -R. Lee, W. -H. Kim, J. W. Lee, J. -M. Kim, K. Heo, I. C. Hwang, Y. Park, S. Hong and H. Kim, J. Electrochem. Soc., 157, D10 (2010). 
    9. C. Detavernier, R. L. Van Meirhaeghe, F. Cardon, R. A. Donaton and K. Maex, Microelectron. Eng., 50, 125 (2000). 
    10. W. -H. Kim, S.- J. Park, J. -Y. Son and H. Kim, Nanotechnology, 19, 045302 (2008). 
    11. S. -J. Park, W. -H. Kim, H. -B. -R. Lee, W. J. Maeng and H. Kim, Microelectron. Eng., 85, 39 (2008). 
    12. W. -H. Kim, S. -J. Park, D. Y. Kim and H. Kim, J. Kor. Phys. Soc., 55, 32 (2009). 
    13. R. K. K. Chong, M. Yeadon, W. K. Choi, E. A. Stach and C. B. Boothroyd, Appl. Phys. Lett., 82, 1833 (2003). 
    14. M. L. A. Dass, D. B. Fraser and C. -S. Wei, Appl. Phys. Lett., 58, 1308 (1991). 
    15. R. T. Tung, Appl. Phys. Lett., 68, 3461 (1996). 
    16. T. Aoyama, K. Suzuki, H. Tashiro, Y. Toda, T. Yamazaki, Y. Arimoto and T. Ito, J. Electrochem. Soc., 140, 3624 (1993). 
    17. D. Mathiot, A. Straboni, E. Andre and P. Debenest, J. Appl. Phys., 73, 8215 (1993). 
    18. C. S. Petersson, J. E. E. Baglin, J. J. Dempsey, F. M. d'Heurle and S. J. La Placa, J. Appl. Phys., 53, 4866 (1982). 

 활용도 분석

  • 상세보기

    amChart 영역
  • 원문보기

    amChart 영역

원문보기

무료다운로드
  • NDSL :
유료다운로드

유료 다운로드의 경우 해당 사이트의 정책에 따라 신규 회원가입, 로그인, 유료 구매 등이 필요할 수 있습니다. 해당 사이트에서 발생하는 귀하의 모든 정보활동은 NDSL의 서비스 정책과 무관합니다.

원문복사신청을 하시면, 일부 해외 인쇄학술지의 경우 외국학술지지원센터(FRIC)에서
무료 원문복사 서비스를 제공합니다.

NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.

이 논문과 함께 출판된 논문 + 더보기