본문 바로가기
HOME> 논문 > 논문 검색상세

논문 상세정보

Surface and interface analysis : SIA v.20 no.3, 1993년, pp.221 - 227  

AES and XPS characterization of SiNx layers

Pavlyak, F. ; Bertoti, I. ; Mohai, M. ; Biczo, I. ; Giber, J. ;
  • 초록  

    The properties of SiN x > layers are largely influenced by their composition and the chemical state of the constituents. In the present study SiN x sub> layers obtained by plasma-enhanced and low-pressure chemical desorption methods were characterized by AES and XPS. In the case of the most frequently applied AES characterization, the peak shape and position of the Si LVV line largely depend on the measurement parameters. In order to derive optimum conditions to minimize these effects, the energies and intensity ratios of Si LVV and N KLL peaks were examined in a wide range of AES measurement parameters: a primary electron energy of 1.0-5.0 keV and a current of 0.1-5.0 μA; sputtering conditions are: Ar + > ion energy of 0.5-3.0 keV and a current of 0.3-1.1 μA. It is clearly demonstrated that both the composition (Si N ratio) and the chemical state of silicon are affected by the applied parameters. Also, the response of the two types of layers to Ar + > ion energy showed a marked difference. As a result, optimized conditions are proposed for AES characterization. The quantitative analysis of the layers was performed by XPS. Corrected sensitivity factors for Si LVV, Si KLL and O KVV are evaluated on the basis of XPS data. It can be stated that the low-energy Si LVV peak is more sensitive to the conditions of the measuring parameters than the high-energy Si KLL peak, whereas the N KLL peak showed neither a significant energy shift nor a shape change.(Author abstract)


  • 원문보기

    원문보기
    무료다운로드 유료다운로드
    • 원문이 없습니다.

    유료 다운로드의 경우 해당 사이트의 정책에 따라 신규 회원가입, 로그인, 유료 구매 등이 필요할 수 있습니다. 해당 사이트에서 발생하는 귀하의 모든 정보활동은 NDSL의 서비스 정책과 무관합니다.

    NDSL에서는 해당 원문을 복사서비스하고 있습니다. 아래의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.

 활용도 분석

  • 상세보기

    amChart 영역
  • 원문보기

    amChart 영역