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Journal of low temperature physics v.90 no.3/4, 1993년, pp.281 - 304  

Electrical transport properties of thin cadmium films at low temperatures

Meikap, A. K. ; Das, A. ; Chatterjee, S. ;
  • 초록  

    Abstract We report here the results of an extensive study of localization and electron-electron interaction effects in thin cadmium films with thickness ranging from 80 A to 350 A. Measurements of the resistance as a function of both temperature and magnetic field have allowed us to separate the contributions of localization and electron-electron interaction. The low resistive films of thicknesses 300 A and 350 A do not show any localization. The resistance of these samples decreases logarithmically with decreasing temperature below 10 K, while a ln( T ) increases in resistance is observed for the high resistive films of thickness in the range of 80–120 A. Magnetoresistance of low resistive samples obeys the expression &Dgr; R ( H )/ R ( O )= AT n . But, both the resistance and magnetoconductance of the high resistive films are well explained by weak localization and electron-electron interaction effect. From the magnetoconductance measurement, we have calculated the inelastic scattering time (&tgr; i ) and the spin-orbit scattering time (&tgr; so ). The magnitude of spin-orbit scattering time is smaller than the inelastic scattering time. The inelastic scattering has been shown to arise due to the electron-electron scattering and the absolute magnitude of this scattering rate agrees reasonably well with the theory within the temperature range 1.8 K≤ T ≤5 K. At higher temperature (5 K T ≤20 K), the inelastic scattering time obeys the expression &tgr; i ∝ T −2 , due to electronphonon scattering.


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