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The novel encapsulation method for organic thin-film transistors

Lee, Jung Hun    (Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, South Korea   ); Kim, Gi Heon    (Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, South Korea   ); Kim, Seong Hyun    (Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, South Korea   ); Lim, Sang Chul    (Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, South Korea   ); Yang, Yong Suk    (Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, South Korea   ); Oh, Jiyoung    (Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, South Korea   ); Youk, Ji Ho    (Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon 305-350, South Korea   ); Jang, Jin    (Department of Information D  ); Zyung, Taehyoung  
  • 초록

    Abstract In this study, we report a novel encapsulation method for longevity of an organic thin-film transistor (OTFT) using pentacene by means of an adhesive multiplayer included Al film. For encapsulation of OTFTs, the Al film adhered onto the OTFT in a dry nitrogen atmosphere using a proper adhesive. A lifetime, which was defined as the time necessary to reduce mobility to 2% of initial mobility value, was observed from the typical I D – V D characteristics of the field-effect transistor (FET). The initial field effect mobility, μ , was measured to be 2.0×10 −1 cm 2 /Vs. The characterization was maintained for long times in air. No substantial degeneration occurred. The performance and the stability are probably due to the encapsulation effect.


  • 주제어

    OTFT .   Organic transistor .   Encapsulation .   Lifetime .   Passivation.  

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