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ACS applied materials & interfaces v.9 no.2, 2017년, pp.1858 - 1869   SCI SCIE
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Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies

Faraz, Tahsin (Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, ); van Drunen, Maarten (Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, ); Knoops, Harm C. M. (Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, ); Mallikarjunan, Anupama (Air Products and Chemicals Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011, ); Buchanan, Iain (Air Products and Chemicals Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011, ); Hausmann, Dennis M. (Lam Research Corporation, 11155 Southwest Leveton Drive, Tualatin, Oregon 97062, ); Henri, Jon (Lam Research Corporation, 11155 Southwest Leveton Drive, Tualatin, Oregon 97062, ); Kessels, Wilhelmus M. M. (Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, );
  • 초록  

    The advent of three-dimensional (3D) finFET transistors and emergence of novel memory technologies place stringent requirements on the processing of silicon nitride (SiN x ) films used for a variety of applications in device manufacturing. In many cases, a low temperature ( x films that are etch resistant and also conformal when grown on 3D substrate topographies. In this work, we developed a novel plasma-enhanced atomic layer deposition (PEALD) process for SiN x using a mono-aminosilane precursor, di( sec -butylamino)silane (DSBAS, SiH 3 N( s Bu) 2 ), and N 2 plasma. Material properties have been analyzed over a wide stage temperature range (100–500 °C) and compared with those obtained in our previous work for SiN x deposited using a bis-aminosilane precursor, bis( tert -butylamino)silane (BTBAS, SiH 2 (NH t Bu) 2 ), and N 2 plasma. Dense films (∼3.1 g/cm 3 ) with low C, O, and H contents at low substrate temperatures ( x films on high aspect ratio (4.5:1) 3D trench nanostructures to investigate film conformality and wet-etch resistance (in dilute hydrofluoric acid, HF/H 2 O = 1:100) relevant for state-of-the-art device architectures. Film conformality was below the desired levels of >95% and attributed to the combined role played by nitrogen plasma soft saturation, radical species recombination, and ion directionality during SiN x deposition on 3D substrates. Yet, very low wet-etch rates (WER ≤ 2 nm/min) were observed at the top, sidewall, and bottom trench regions of the most conformal film deposited at low substrate temperature ( x films on both planar and 3D substrate topographies. Graphic Abstract ACS Electronic Supporting Info


  • 주제어

    silicon nitride .   atomic layer deposition .   ALD .   plasma ALD .   di(sec-butylamino)silane .   DSBAS .   thin film .   wet etch.  

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