본문 바로가기
HOME> 논문 > 논문 검색상세

논문 상세정보

ACS applied materials & interfaces v.9 no.2, 2017년, pp.1684 - 1691   SCI SCIE
본 등재정보는 저널의 등재정보를 참고하여 보여주는 베타서비스로 정확한 논문의 등재여부는 등재기관에 확인하시기 바랍니다.

In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2–MoSe2 Lateral Heterostructures and Photodetector Application

Chen, Xiaoshuang (Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, ); Qiu, Yunfeng ( Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, ); Yang, Huihui ( Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, ); Liu, Guangbo ( Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, ); Zheng, Wei ( Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, ); Feng, Wei ( Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, ); Cao, Wenwu ( Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150080, ); Hu, Wenping ( Department of Physics, Harbin Institute of Technology, Harbin 150080, ); Hu, PingAn ( Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, );
  • 초록  

    Considering the unique layered structure and novel optoelectronic properties of individual MoS 2 and MoSe 2 , as well as the quantum coherence or donor–acceptor coupling effects between these two components, rational design and artificial growth of in-plane mosaic MoS 2 /MoSe 2 lateral heterojunctions film on conventional amorphous SiO 2 /Si substrate are in high demand. In this article, large-area, uniform, high-quality mosaic MoS 2 /MoSe 2 lateral heterojunctions film was successfully grown on SiO 2 /Si substrate for the first time by chemical vapor deposition (CVD) technique. MoSe 2 film was grown along MoS 2 triangle edges and occupied the blanks of the substrate, finally leading to the formation of mosaic MoS 2 /MoSe 2 lateral heterojunctions film. The composition and microstructure of mosaic MoS 2 /MoSe 2 lateral heterojunctions film were characterized by various analytic techniques. Photodetectors based on mosaic MoS 2 /MoSe 2 lateral heterojunctions film, triangular MoS 2 monolayer, and multilayer MoSe 2 film are systematically investigated. The mosaic MoS 2 /MoSe 2 lateral heterojunctions film photodetector exhibited optimal photoresponse performance, giving rise to responsivity, detectivity, and external quantum efficiency (EQE) up to 1.3 A W –1 , 2.6 × 10 11 Jones, and 263.1%, respectively, under the bias voltage of 5 V with 0.29 mW cm –2 (610 nm), possibly due to the matched band alignment of MoS 2 and MoSe 2 and strong donor–acceptor delocalization effect between them. Taking into account the similar edge conditions of transition metal dichalcogenides (TMDCs), such a facile and reliable approach might open up a unique route for preparing other 2D mosaic lateral heterojunctions films in a manipulative manner. Furthermore, the mosaic lateral heterojunctions film like MoS 2 /MoSe 2 in the present work will be a promising candidate for optoelectronic fields. Graphic Abstract ACS Electronic Supporting Info


  • 주제어

    mosaic .   lateral heterostructure .   MoS2/MoSe2 .   2D material .   photodetector.  

 활용도 분석

  • 상세보기

    amChart 영역
  • 원문보기

    amChart 영역

원문보기

무료다운로드
  • 원문이 없습니다.
유료다운로드

유료 다운로드의 경우 해당 사이트의 정책에 따라 신규 회원가입, 로그인, 유료 구매 등이 필요할 수 있습니다. 해당 사이트에서 발생하는 귀하의 모든 정보활동은 NDSL의 서비스 정책과 무관합니다.

NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.

이 논문과 함께 출판된 논문 + 더보기