본문 바로가기
HOME> 논문 > 논문 검색상세

논문 상세정보

ACS applied materials & interfaces v.9 no.2, 2017년, pp.1577 - 1584   SCI SCIE
본 등재정보는 저널의 등재정보를 참고하여 보여주는 베타서비스로 정확한 논문의 등재여부는 등재기관에 확인하시기 바랍니다.

Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates

Breckenfeld, Eric (Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ); Kim, Heungsoo ( Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ); Burgess, Katherine ( Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ); Charipar, Nicholas ( Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ); Cheng, Shu-Fan ( Nova Research, Inc., 1900 Elkin Street, Suite 230, Alexandria, Virginia 22308, ); Stroud, Rhonda ( Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ); Piqué ( Naval Research Laboratory, 4555 Overlook Avenue, Washington, D.C. 20375, ); , Alberto ( );
  • 초록  

    Epitaxial VO 2 /TiO 2 thin film heterostructures were grown on (100) (m-cut) Al 2 O 3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor–metal transition (SMT) temperature of VO 2 to ∼44 °C while retaining a 4 order of magnitude SMT using the TiO 2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO 2 /TiO 2 /Al 2 O 3 heterostructures as a function of TiO 2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO 2 buffer films is responsible for the partially strained VO 2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO 2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority. Graphic Abstract ACS Electronic Supporting Info


  • 주제어

    epitaxial VO2 .   TiO2 buffer layers .   semiconductor-to-metal transition .   strain effect .   electrical switching.  

 활용도 분석

  • 상세보기

    amChart 영역
  • 원문보기

    amChart 영역

원문보기

무료다운로드
  • 원문이 없습니다.
유료다운로드

유료 다운로드의 경우 해당 사이트의 정책에 따라 신규 회원가입, 로그인, 유료 구매 등이 필요할 수 있습니다. 해당 사이트에서 발생하는 귀하의 모든 정보활동은 NDSL의 서비스 정책과 무관합니다.

NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.

이 논문과 함께 출판된 논문 + 더보기