논문 상세정보
On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
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초록
We report growth, structural, and electrical properties of epitaxial Ge layers on Si (001) wafers for next generation complementary metal oxide semiconductor devices. The epi-Ge layers were grown by solid source molecular beam epitaxy (MBE) at substrate temperatures (T G ) varying from 200 o C to 500 o C. A two-step growth process, where an initial layer of thickness ~30 nm is grown at a substrate temperature of 250 o C (except those grown below/at 250 o C), and the remaining layer is grown at a higher temperature, was found to be an efficient approach to improve the crystal quality of the Ge layers. The epi-Ge on Si exhibits bulk hole-mobility as high as 736 cm 2 /V-s at room temperature. Ti/Ge/Ti metal-semiconductor-metal (MSM) back-to-back Schottky diodes, fabricated on these epitaxial Ge layers, show excellent electrical properties. Further, metal oxide semiconductor (MOS) capacitors fabricated with HfO 2 as the gate oxide exhibit low leakage current density of 4.7 x 10 -2 A/cm 2 (at V g -V FB = 1 V) and mid-gap interface trap density of 5.0 x 10 12 cm -2 eV -1 .
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주제어
활용도 분석
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Editorial Board
- Editorial Board
- On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
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