Aging comparative analysis of high-performance FinFET and CMOS flip-flops
This paper presents a comparative performance analysis to investigate the impact of aging mechanisms on various flip-flops in CMOS and FinFET technologies. We consider Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) effects on the robustness of high performance flip-flops. To apply BTI and HCI aging mechanisms, we utilize long-term model to estimate @?V th and employ the updated V th in transistor model file. The simulation results on performance analysis indicate the high ranking of various flip-flops considering speed and power consumption in each CMOS and FinFET technologies, moreover, approve the superiority of static FinFET flip-flops over CMOS flip-flops. In addition, a comparative analysis considering temperature and V DD variations over different FinFET flip-flop structures demonstrates the average percentages of T DQmin and PDP degradation against aging mechanisms are significantly less than similar CMOS flip-flops.
- 원문이 없습니다.
NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.
- 이 논문과 함께 출판된 논문 + 더보기