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Nano energy v.31, 2017년, pp.194 - 200   SCIE
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The influence of doping sites on achieving higher thermoelectric performance for nanostructured α-MgAgSb

Liu, Zihang (National Key Laboratory for Precision Hot Processing of Metals and School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China ) ; Wang, Yumei (National Key Laboratory for Precision Hot Processing of Metals and School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China ) ; Gao, Weihong (National Key Laboratory for Precision Hot Processing of Metals and School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China ) ; Mao, Jun (Department of Physics and TcSUH, University of Houston, Houston, TX 77204, USA ) ; Geng, Huiyuan (State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China ) ; Shuai, Jing (Department of Physics and TcSUH, University of Houston, Houston, TX 77204, USA ) ; Cai, Wei (National Key Laboratory for Precision Hot Processing of Metals and School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China ) ; Sui, Jiehe (National Key Laboratory for Precision Hot Processing of Metal ) ; Ren, Zhifeng ;
  • 초록  

    Abstract P-type nanostructured α-MgAgSb holds a great promise for low temperature waste heat energy harvesting. In this work, we first investigate the effect of doping site on the carrier transport behavior of nanostructured α-MgAgSb. Ca doping on Mg site is rationally chosen to optimize carrier concentration and thus enhance power factor. It is demonstrated that Ca doping on the Mg site leads to higher mobility and power factor in comparison with doping on Sb site, originated from the less introduced perturbation to valence band upon doping. As the result of doping-site effect, a peak ZT of ~1.3 at ~550K and average ZT of ~1.1 between 300K and 550K are achieved by Ca doping on the Mg site. Our current work on only points out that doping on the site that has less influence on the charge-conducting band should be a critical doping principle in thermoelectric materials field, but also highlights the promising prospect of nanostructured α-MgAgSb for low temperature power generation. Highlights Doping on the Mg site leads to higher mobility and power factor in comparison with doping on Sb sub-lattice, originated from the less introduced perturbation to valence band upon doping. A peak ZT of ~1.3 at ~550K and average ZT of ~1.1 between 300K and 550K are achieved by Ca doping on the Mg site. Graphical abstract [DISPLAY OMISSION]


  • 주제어

    Thermoelectric materials .   Doping site .   Nanostructured MgAgSb .   Nanotwin.  

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