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Nano energy v.31, 2017년, pp.258 - 263   SCIE
본 등재정보는 저널의 등재정보를 참고하여 보여주는 베타서비스로 정확한 논문의 등재여부는 등재기관에 확인하시기 바랍니다.

Post ionized defect engineering of the screen-printed Bi2Te2.7Se0.3 thick film for high performance flexible thermoelectric generator

Kim, Sun Jin (Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong, Daejeon, Republic of Korea ); Choi, Hyeongdo (Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong, Daejeon, Republic of Korea ); Kim, Yongjun (Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong, Daejeon, Republic of Korea ); We, Ju Hyung (Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong, Daejeon, Republic of Korea ); Shin, Ji Seon (Tegway Co. Ltd., #711 National Nano Fab., 291 Daehak-ro, Yuseong-gu, 34141 Daejon, Republic of Korea ); Lee, Han Eol (Department of Materials Science and Engineering, KAIST, 291 Daehak-ro, Yuseong, Daejeon, Republic of Korea ); Oh, Min-Wook (Department of Advanced Materials Engineering, Hanbat National University, Daejeon 34158, Republic of Korea ); Lee, Keon Jae (Department of Materials Science and Engineering, KAIST, 291 Daehak-ro, Yuseong, Daejeon, Republic of Korea ); Cho, Byung Jin (Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong, Daejeon, Republic of Korea );
  • 초록  

    Abstract Flexible thermoelectric generators (f-TEGs), fabricated by the screen printing technique, have been introduced as a semi-permanent power source for wearable and flexible electronic systems. However, the output power density of the f-TEG module is still limited due to the low ZT of the screen-printed thermoelectric (TE) film. We herein report a post ionized defect engineering process that effectively controls ionized defects and improves the ZT value of a screen-printed ternary TE film. It was found that post annealing in a forming gas ambient (4% H 2 +96% Ar) can reduce the nano- and micro-bismuth oxide particles in screen-printed n-type BiTeSe films, resulting in a bismuth rich condition and creation of bismuth antisite defects. We achieved a maximum ZT of 0.90 with the screen-printed n-type BiTeSe thick film at room temperature, which is almost comparable to that of the bulk Bi 2 Te 2.7 Se 0.3 and is a 2-fold increase over the same screen-printed film without the hydrogen ambient annealing. To demonstrate the applicability of this approach, a f-TEG device with 72 TE pairs (p-type Bi 0.5 Sb 1.5 Te 3 , forming gas annealed n-type Bi 2 Te 2.7 Se 0.3 ) was fabricated by the screen printing technique. The device generated a high output power of 6.32mWcm −2 at ΔT=25.6°C. These results demonstrate the feasibility of high performance and large-scale f-TEG fabrication using ionized-defect engineering. Highlights A post ionized defect engineering process for improving ZT value of the screen-printed BiTeSe thick film is proposed. A post annealing in a forming gas ambient (4% H 2 + 96% Ar) can reduce the nano- and micro-bismuth oxide particles in screen-printed BiTeSe films, resulting in a bismuth rich condition and creation of bismuthantisite defects. A maximum ZT of 0.90 with the screen-printed BiTeSe film at room temperature, which isalmost comparable to that of the bulk Bi 2 Te 2.7 Se 0.3 and is a 2-fold increase over the same screen-printed film without the hydrogen ambient annealing. A f-TEG device with 72 TE pairs (p-type Bi 0.5 Sb 1.5 Te 3 , forming gas annealed n-type Bi 2 Te 2.7 Se 0.3 ) generatesa high output power of 6.32 mWcm -2 at ΔT = 25.6 °C. Graphical abstract [DISPLAY OMISSION]


  • 주제어

    Screen-printed Bi2Te2.   7Se0.   3 film .   Post ionized defect engineering .   Hydrogen annealing .   Bismuth antisite defect.  

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