High-performance reverse electrowetting energy harvesting using atomic-layer-deposited dielectric film
Abstract Reverse electrowetting-on-dielectric (REWOD), which is a novel technology for energy harvesting, was demonstrated by depositing Al 2 O 3 via atomic layer deposition (ALD). Specifically, thin layers of Al 2 O 3 about 100nm-thick were successfully formed by ALD to obtain dense films with high capacitances. REWOD with the ALD Al 2 O 3 thin films exhibited high performances under low-voltage and low-excitation-frequency conditions. The maximum power density was 11mW/cm 2 with a DC bias of 24V and an external excitation frequency of 2Hz. Moreover, ALD and sputtered thin films were compared by investigating their capacitances and leakage current densities. Due to the differences between the film densities and growth methods, the ALD thin films exhibited higher capacitances and lower leakage current densities. It was also determined that the leakage current affects the REWOD energy harvesting performance. By analyzing these features, it was confirmed that ALD thin films are suitable for REWOD energy harvesting. Highlights Highly dense ultra-thin dielectric layer was fabricated for capacitive applications. High-performance of REWOD energy harvesting was demonstrated. Superior dielectric properties were obtained using a common oxide material. Graphical abstract High performance reverse electrowetting on dielectric device utilizing superior dielectric layer fabricated by atomic layer deposition. [DISPLAY OMISSION]
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