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IEEE electron device letters : a publication of the IEEE Electron Devices Society v.38 no.1, 2017년, pp.103 - 106   SCI SCIE
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High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

Zhou, Hong (Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA ); Si, Mengwei ( Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA ); Alghamdi, Sami ( Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA ); Qiu, Gang ( Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA ); Yang, Lingming ( Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA ); Ye, Peide D. ( );
  • 초록  

    In this letter, we report on high-performance depletion/enhancement-mode $\beta $ -Ga 2 O 3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents ( $\text{I}_{\mathrm {\sf D}}$ ) of 600/450 mA/mm, which are nearly one order of magnitude higher than any other reported $\text{I}_{\mathrm {\sf D}}$ values. The threshold voltage ( $\text{V}_{\mathrm {\sf T}}$ ) can be modulated by varying the thickness of the $\beta $ -Ga 2 O 3 films and the E-mode GOOI FET can be simply achieved by shrinking the $\beta $ -Ga 2 O 3 film thickness. Benefiting from the good interface between $\beta $ -Ga 2 O 3 and SiO 2 and wide bandgap of $\beta $ -Ga 2 O 3 , a negligible transfer characteristic hysteresis, high $\text{I}_{\mathrm {\sf D}}$ ON/OFF ratio of $10^{10}$ , and low subthreshold swing of 140 mV/decade for a 300-nm-thick SiO 2 are observed. E-mode GOOI FET with source to drain spacing of 0.9- $\sf \mu \text{m}$ demonstrates a breakdown voltage of 185 V and an average electric field (E) of 2 MV/cm, showing the great promise of GOOI FET for future power devices.


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