Fabrication and Properties of Thin-Film InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Transferred From Si (1 1 1) Substrate Onto a Thin Epoxy Resin Carrier
Crack-free thin film InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) were successfully transferred from 2-in Si (1 1 1) growth substrate onto a thin epoxy resin carrier. The good chemical corrosion resistance of epoxy resin simplifies the protective processes during silicon substrate wet-chemical etching. The Raman spectra measurement shows an obvious relaxation of tensile strain after the LEDs structure transferred to epoxy resin carrier. Combining with a metal reflector deposition after silicon removed, the thin-film LEDs on epoxy resin carrier show significant improvement in comparison with the conventional LEDs on silicon. The operating voltage at 350 mA decreases from 4.95 to 4.5 V and the series resistance decreases from 3.1 to 2.6 Ω. Light output shows an increase of 92% after the LEDs transferred to epoxy resin carrier.
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