Modeling and Optimization of Multiground TSVs for Signals Shield in 3-D ICs
This paper presents an effective loop impedance extraction method and a model of a signal through-silicon via (TSV) surrounded by multiground TSVs. According to this method, the effective coupling substrate capacitances of multiground TSVs with different numbers and placements are calculated. Based on the calculated values of the resistance-inductance-capacitance-conductance (RLCG) parameters, the equivalent circuit and a two-port network model are established. The S-parameters of the model are validated by the simulated and measured results. Then, the effect of different patterns of ground TSVs on the central signal and coupling capacitance are discussed. Note that the hexagon pattern proposed in this paper can save the occupied area prominently without damaging the signal integrity.