Drain Extended Tunnel FET—A Novel Power Transistor for RF and Switching Applications
For the first time, a novel drain-extended tunnel FET (DeTFET) device is disclosed in this paper, while addressing the need for high-voltage/high-power devices for system-on-chip and automotive applications in beyond FinFET technology nodes. Operation of the proposed DeTFET device is presented with physics of band-to-band tunneling and associated carrier injection. Device’s intrinsic (dc/switching), analog, and RF performance is compared with the state-of-the-art drain-extended nMOS (DeNMOS) device. The proposed device for 11 V breakdown voltage offers $15\times $ better subthreshold slope, $8\times $ lower off-state leakage, $2\times $ higher ON current, and absence of channel length modulation and drain induced barrier lowering, while keeping $2.5\times $ lower threshold voltage. This results into significantly better ON resistance for a range of gate voltages, higher transconductance, orders of magnitude higher intrinsic transistor gain, and better RF characteristics, when compared with the DeNMOS device. Finally, device design guidelines are presented and scalability, without affecting breakdown voltage, of the proposed device is compared with the DeNMOS device.
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