Dynamic and Power Performance of Multiple State Electrostatically Formed Nanowire Transistors
Electrostatically formed nanowire (EFN)-based transistors have recently been proposed as a single device with multiplexer functionality. In these transistors, the conduction path between source and one of the drains is determined by the bias applied to the two junction-side gates. By applying a nonsymmetric bias on the side gates, the lateral position of the EFN is controlled. We present a detailed analysis of the different states of the multiple state electrostatically formed nanowire transistor device, the transient time between them and the power exerted during each transition. The dependence of transition time between states and leakage currents in cutoff states on different geometry parameters is also presented.
원문복사신청을 하시면, 일부 해외 인쇄학술지의 경우 외국학술지지원센터(FRIC)에서
무료 원문복사 서비스를 제공합니다.
NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.
- 이 논문과 함께 출판된 논문 + 더보기