Hot-Carrier-Induced Degradations Investigations for 600 V SOI-LIGBT by an Improved Charge Pumping Solution
Hot-carrier-induced degradations of 600 V lateral insulated gate bipolar transistor on SOI substrate (SOI-LIGBT) under different stresses are investigated. Since the charge pumping (CP) method, in which the Si/SiO 2 interface damage could be detected, is not well suitable for SOI-LIGBT, an improved solution by fabricating a similar assistant SOI-LIGBT with a specialized CP test electrode is proposed. It makes the CP method applicable for revealing the degradation mechanisms of the target device. It is verified that there is almost not interface damage for the low gate stress. The main degradation mechanism is hot-holes injection into the field oxide under the polygate edge for the medium gate stress, whereas the electrons trapping into the gate oxide and the interface states generations in the channel region for the maximum gate stress.
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