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IEEE transactions on electron devices v.64 no.2, 2017년, pp.407 - 411   SCI SCIE
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A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes

Ren, Jian (Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications (Ministry of Education), Jiangnan University, Wuxi, China ); Mou, Wenjie (Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications (Ministry of Education), Jiangnan University, Wuxi, China ); Zhao, Linna (Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications (Ministry of Education), Jiangnan University, Wuxi, China ); Yan, Dawei (Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications (Ministry of Education), Jiangnan University, Wuxi, China ); Yu, Zhiguo (Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications (Ministry of Education), Jiangnan University, Wuxi, China ); Yang, Guofeng (Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications (Ministry of Education), Jiangnan University, Wuxi, China ); Xiao, Shaoqing ( ); Gu, Xiaofeng ( );
  • 초록  

    In this paper, we perform a comprehensive study on the reverse current degradation mechanisms in Au/Ni/n-GaN Schottky diodes based on an in-depth understanding on the defect-related current transport mechanisms. Instead of traditional Poole–Frenkel (PF) emission model, an extended bulk-limited PF transport process, including the compensation effect, is adopted to explain the variation of the PF current slope as a function of the stress time, which majorly takes place inside the depletion region near the neutral semiconductor side. Based on the electrostatic analysis, we develop a shallow donor-like defects model to address the current degradation kinetics, which states that the energetic electrons produced by Fowler–Nordheim tunneling can induce significant Joule heating effect during the subsequent drift move of field, and give rise to the formation of the donor-like defects, and in turn enhance the surface electrical field to cause a significant increase of the tunneling component, in good agreement with the emission microscope observations.


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