Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application
In this paper, we present a distinguished hysteresis behavior by a few nanometers inlaid Zr–Hf–O (ZHO) layer between the Ba 0.6 Sr 0.4 TiO 3 (BST) film and the metal Pt electrode. The capacitance–voltage curve shows an insignificant change in the range of 0.3–1 MHz. The excellent retention property showing the difference of high state and low state is estimated as about 23.0% and 12.5% after one year and ten years, which might be caused by the deeper trap in an interdiffusion layer. The possible mechanism is proposed that the BST/ZHO interface exists as an interdiffusion, which could create additional defects and ambipolar charge injection causing the hysteresis behavior due to a postdeposition annealing process. The device can be employed as a promising candidate for applying in novel nonvolatile memory device.