A Deterministic and Self-Consistent Solver for the Coupled Carrier-Phonon System in SiGe HBTs
A stationary deterministic solver based on a spherical harmonics expansion of the Boltzmann transport equations for electrons, holes, and phonons is presented to study self-heating in ultrascaled bipolar transistors. With the electrothermal device simulator, a state-of-the-art toward-terahertz SiGe heterojunction bipolar transistor is analyzed and the simulation results are verified against experimental data. To investigate nonequilibrium effects for the carrier-phonon system, the impact of hot longitudinal optical phonons on steady-state carrier transport is discussed. Furthermore, the self-consistent and deterministic solution of the coupled set of equations allows to extract the junction temperature by making use of a method based on the simulated DC characteristics. The resultant junction temperature is compared with the value obtained from the temperature profile within the nanoscale device. Good agreement is obtained for the average temperature in the base–emitter junction verifying the analytical approach used to extract the thermal resistance of the device by experiments.
원문복사신청을 하시면, 일부 해외 인쇄학술지의 경우 외국학술지지원센터(FRIC)에서
무료 원문복사 서비스를 제공합니다.
NDSL에서는 해당 원문을 복사서비스하고 있습니다. 위의 원문복사신청 또는 장바구니 담기를 통하여 원문복사서비스 이용이 가능합니다.
- 이 논문과 함께 출판된 논문 + 더보기