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Diamond and related materials v.81, 2018년, pp.96 - 102   SCI SCIE
본 등재정보는 저널의 등재정보를 참고하여 보여주는 베타서비스로 정확한 논문의 등재여부는 등재기관에 확인하시기 바랍니다.

Silicon carbide nanocrystals produced by femtosecond laser pulses

Tóth, Sára (Wigner Research Center for Physics of the Hungarian Academy of Sciences, Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary ) ; Németh, Péter (Institute of Materials and Environmental Chemistry, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Magyar tudósok körútja 2, H-1117 Budapest, Hungary ) ; Rácz, Péter (Wigner Research Center for Physics of the Hungarian Academy of Sciences, Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary ) ; Himics, László (Wigner Research Center for Physics of the Hungarian Academy of Sciences, Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary ) ; Dombi, Péter (Wigner Research Center for Physics of the Hungarian Academy of Sciences, Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary ) ; Koós, Margit (Wigner Research Center for Physics of the Hungarian Academy of Sciences, Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary ) ;
  • 초록  

    Abstract Ultrashort laser pulses provide an excellent dry and clean patterning technique in nanoscience for preparing quantum dots and quantum wires as well as depositing nanocrystalline grains of technologically important semiconductors. Here, we experimentally demonstrate the formation of silicon carbide (SiC) nanocrystals with wide size distribution (70–700nm) by irradiation of carbon layers deposited on silicon wafers with ultrashort laser pulses of 42fs pulse duration with 1kHz repetition rate. Surface morphology of the laser irradiated region monitored by scanning electron microscopy (SEM) exhibits nanocrystalline agglomerates of various size in the vicinity of ablated craters. Transmission electron microscopy (TEM) measurements show the occurrence of ~100nm size cubic and hexagonal SiC polytypes in addition to Si and amorphous silica nanoparticles. Independent sample diagnostics with Raman active phonon modes also indicates the formation and solidification of several SiC polytypes, which occur around the irradiated crater region. Further development of this laser-induced process and the accurate control of the laser pulse parameters can open new routes for preparing tailor-made SiC nanomaterials that have useful properties for electronic and biomedical applications. Highlights SiC nanocrystals were successfully created by the irradiation of amorphous carbon layer with ultrashort laser pulses. Raman spectroscopy and TEM methods were used to confirm the presence of SiC nanocrystals near the ablated craters. Detailed analysis of the transversal and longitudinal optical modes indicates the formation of cubic and hexagonal SiC. Graphical abstract [DISPLAY OMISSION]


  • 주제어

    Silicon carbide .   Nanocrystals .   Femtosecond laser pulses .   Raman scattering .   TEM.  

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