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Diamond and related materials v.81, 2018년, pp.113 - 117   SCI SCIE
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Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al

Wang, Yan-Feng (Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an &10049, PR China ) ; Chang, Xiaohui (Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an &10049, PR China ) ; Zhang, Xiaofan (Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an &10049, PR China ) ; Fu, Jiao (Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an &10049, PR China ) ; Fan, Shuwei (Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an &10049, PR China ) ; Bu, Renan (Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an &10049, PR China ) ; Zhang, Jingwen (Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi' ) ; Wang, Wei ; Wang, Hong-Xing ; Wang, Jingjing ;
  • 초록  

    Abstract Fabrication of normally-off hydrogen-terminated diamond field-effect transistors (FET) has been carried out by using 3nm Al 2 O 3 dielectric layer, which was formed by thermally oxidizing 3nm Al in air. 100nm Al was covered on the 3nm Al 2 O 3 dielectric layer to form Al/Al 2 O 3 gate. The leakage current density of FET with 6μm gate length kept smaller than 5×10 −7 A·cm −2 , while the gate voltages swept from 3 to −5V. The capacitance-voltage characteristic indicated low-trapped charge densities in Al 2 O 3 dielectric layer. For comparison, FET with only 3nm Al 2 O 3 gate and with 100nm Al/3nm Al 2 O 3 gate was fabricated, which showed normally-on and normally-off characteristic respectively, indicating that 100nm Al/3nm Al 2 O 3 gate could deplete hole densities in FET channel due to the difference of work function between Al and hydrogen-terminated diamond. Highlights Normally-off hydrogen-terminated diamond FET has been fabricated. Al gate can deplete hole in the channel of FET. Graphical abstract [DISPLAY OMISSION]


  • 주제어

    Diamond film .   MOSFET .   Hydrogen-terminated .   MPCVD .   Normally-off.  

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