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Applied surface science v.433, 2018년, pp.271 - 278   SCI SCIE
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Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

Chen, Jieyi (College of Materials Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Yudao Street, Nanjing 210016, PR China ) ; Shen, Honglie (College of Materials Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Yudao Street, Nanjing 210016, PR China ) ; Zhai, Zihao (College of Materials Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Yudao Street, Nanjing 210016, PR China ) ; Li, Yufang (College of Materials Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Yudao Street, Nanjing 210016, PR China ) ; Yi, Yunge (College of Materials Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Ast ) ;
  • 초록  

    Abstract To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se 2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu + redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of V OC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu 2-x Se phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency. Highlights Well crystallized CIGS films were prepared by e-beam evaporation. Crystal quality and compactness of CIGS thin films were improved by Sb doping. Cu inward migration in CIGS film resulted in Fermi level movement by Sb doping. The efficiency of CIGS solar cell was enhanced by 3.9% after 20nm Sb doping. Graphical abstract [DISPLAY OMISSION]


  • 주제어

    CIGS thin film .   Sb doping .   CIGS/CdS interface .   CIGS solar cell.  

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