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T : 목차정보

The Korean journal of ceramics 11건

  1. [국내논문]   Properties of Silicon Carbide-Carbon Fiber Composites Prepared by Infiltrating Porous Carbon Fiber Composites with Liquid Silicon  

    Lee, Jae-Chun (Department of Inorganic Materials Engineering, Myong Ji University ) , Park, Min-Jin (Department of Inorganic Materials Engineering, Myong Ji University ) , Shin, Kyung-Sook (Department of Inorganic Materials Engineering, Myong Ji University ) , Lee, Jun-Seok (Department of Inorganic Materials Engineering, Myong Ji University ) , Kim, Byung-Gyun (Department of Inorganic Materials Engineering, Myong Ji University)
    The Korean journal of ceramics v.3 no.4 ,pp. 229 - 234 , 1997 , 1225-9381 ,

    초록

    Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$ . Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10 $\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1 $\mu\textrm{m}$ . The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

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  2. [국내논문]   Hardening Properties of Activated Calcium Dialuminate Clinker with Phosphoric Acid Solution  

    Song, Tae-Woong (Department. of Inorg. Mat. Engineering, Kyungnam Univ., ) , Kim, Sei-Gi (Research and Development, Hyundai Cement Co, Ltd)
    The Korean journal of ceramics v.3 no.4 ,pp. 235 - 238 , 1997 , 1225-9381 ,

    초록

    Basic properties of new cement pastes based on the system $CaO-Al_2O_3-P_O_5-H_2O$ were studied Phosphoric acid solutions and calcium dialuminate clinkers synthesized by the hydration-burning method were used for liquid and powder components of the paste, respectively Variation in the compositions of the paste was achieved by changing the liquid/powder ratio and the concentration of phosphoric acid solution. The hardening rate of the paste was so largely affected by the amount of phosphoric acid that hardening was inhibited with the low-concentrated solution but was explosively accelerated with the high-concentrated solution. The phosphoric acid solutions of concentration of 45~50% and the liquid/powder ratio of 0.5~1.5 were favoured for the high early-strength cement paste with the reasonable hardening rate and high strength. The binding phase of hardened paste was the dense amorphous gel of the system $CaO-Al_2O_3-P_O_5-H_2O$ . in which the unreacted calcium dialuminate grains were embeded.

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  3. [국내논문]   Microstructure Characteristics of ZnO of ZnO Varistors Simulated by Voronoi Network  

    Han, Se-Won (Division of Electrical, Korea Electrotechnology Research Institute ) , He, Jin-Liang (Department of Electrical Engineering, Tsinghua University ) , Hwang, Hui-Dong (Department of Electrical Engineering, Hanyang University ) , Kang, Hyung-Boo (Department of Electrical Engineering, Hanyang University)
    The Korean journal of ceramics v.3 no.4 ,pp. 239 - 244 , 1997 , 1225-9381 ,

    초록

    The Voronoi network can be used to effectively simulate the microstructure of ZnO varistors. The nonuniformity in microstructure of simulated ZnO varistor can be changed by setting different disorder degree of Voronoi network. In the region of disorder degree larger than 3 where the simulated microstructures are similar to those the actual ones of ZnO varistors, a chaotic phenomenon exists in the microstructure characteristics. This chaotic property can simulate the original behavior of nonuniformity of electrical characteristics caused by microstructures of ZnO varistors.

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  4. [국내논문]   Luminescence of Y2-xCexSiO5 Phosphor  

    Han-Soo Kim ; Sahn Nahm ; Myong-Ho Kim ; Kyung-Su Suh ; Jae-Dong Byun
    The Korean journal of ceramics v.3 no.4 ,pp. 245 - 248 , 1997 , 1225-9381 ,

    초록

    Photoluminescence (PL) and cathodoluminescence (CL) characteristics of Ce-activated Y 2-x Ce x SiO 5 have been investigated as functions of Ce concentration and firing condition. According to the X-ray, PL and CL results, Y₂SiO 5 is found to have two phases depending on the firing temperature. For the specimen fired above 1270℃, the emission band peaked at 395 ㎚ with a shoulder at 424 ㎚ under ultraviolet (u.v.) and cathode-ray (c.r.) excitation. However, for the specimen fired below 1200℃ in air the peak was observed at 424 ㎚ and it shifted to longer wavelength with reduction level. The reduced specimen for x=0.02 showed the brightest emission under u.v. excitation whereas under c.r. excitation the brightest emission was observed for the reduced specimen for x=0.06.

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  5. [국내논문]   Preparation of Highly Oriented ZnO Thin Films Prepared by Sol-Gel Method  

    Cheol Jeong ; Kyu-Seog Hwang ; Jong-Ha Moon ; Byung-Hoon Kim
    The Korean journal of ceramics v.3 no.4 ,pp. 249 - 252 , 1997 , 1225-9381 ,

    초록

    Highly oriented ZnO thin films were fabricated by dip-coating technique using zinc acetate - 2-methoxyethanol - 2-aminoethanol solution as starting materials, and effects of substrates on the film"s orientation were investigated. Product films were obtained by prefiring at 300, 400, 500 and 550℃ for 10 min, followed by final heat-treatment at the same temperatures as prefiring for 1 h. The c-axis oriented films on glass substrates were prepared by heat-treatment of prefiring films at 300-550℃, while films on alumina showed polycrystalline structure. Films with c-axis orientation exhibited lower specific resistivities than those of polycrystalline films with partial crack and pore.

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  6. [국내논문]   Epitaxial Growth of Pb(Zr, Ti)$O_3$Thin Films on $LaAlO_3$ Substrates by Dipping-Pyrolysis Process  

    Hwang, Kyu-Seog (National Institute of Materials and Chemical Research ) , Kim, Byung-Hoon (Department of Inorganic Materials Engineering, Chonnam National University)
    The Korean journal of ceramics v.3 no.4 ,pp. 253 - 256 , 1997 , 1225-9381 ,

    초록

    Epitaxially grown Pb(Zr, Ti)O $_3$ thin films were prepared on LaAlO $_3$ substrates by the dipping pyrolysis process using metal naphthenates as starting materials Homogeneous Pb-Zr-Ti solutions with toluene were spin-coated onto the substrates and pyrolyzed at 50 $0^{\circ}C$ Highly oriented Pb(Zr, Ti)O $_3$ films confirmed by X-ray diffraction $\theta$ -2 $\theta$ scans were obtained by heat-treated at 75 $0^{\circ}C$ in air The X-ray pole-figure analysis and reciprocal-space mapping of the resulting 0.6 $\mu\textrm{m}$ films showed that the thin films comprising the c-axis oriented tetragonal phase have an epitaxial relationship with the LaAlO $_3$ substrates.

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  7. [국내논문]   C-axis Orientation and Growth Structure of AIN Thin Films on $SiO_2$/Si Substrates Deposited by Reactive RF Magnetron Sputtering  

    Joo, Han-Yong (School of Materials Science and Engineering, Seoul National University ) , Lee, Jae-Bin (School of Materials Science and Engineering, Seoul National University ) , Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University)
    The Korean journal of ceramics v.3 no.4 ,pp. 257 - 262 , 1997 , 1225-9381 ,

    초록

    Aluminum nitride(AIN) thin films were deposited on SiO $_2$ /Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2 $^{\circ}$ (C=0.93 $^{\circ}$ ). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

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  8. [국내논문]   Microstructures and Electrical Properties of RuO₂ Bottom Electrode for Ferroelectric Thin Films  

    Woong-Chul Shin ; Cheol-Hoon Yang ; Jun-Sik Hwang ; Soon-Gil Yoon
    The Korean journal of ceramics v.3 no.4 ,pp. 263 - 268 , 1997 , 1225-9381 ,

    초록

    RuO₂ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl)ruthenium, Ru(C 5 H 5 )₂, was used as the precursor. RuO₂ single phase was obtained at a low deposition temperature of 250℃ and the crystallinity of RuO₂ thin films improved with increasing deposition temperature. RuO₂ thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO₂ films drastically increases with increasing the deposition temperature. The resistivity of the 180 ㎚-thick RuO₂ thin films deposited at 270℃ was 136 μΩ-㎝ and increased with decreasing film thickness. SrBi₂Ta₂O 9 thin films deposited by rf magnetron sputtering on the RuO₂ bottom electrodes showed a fatigue-free characteristics up to ~10 10 cycles under 5 V bipolar square pulses and the remanent polarization, 2 P r and the coercive field, 2 E c , were 5.2 μC/㎠ and 76.0 ㎸/㎝, respectively, for an applied voltage of 5 V. The leakage current density was about 7.0×10 -6 A/㎠ at 150 ㎸/㎝.

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  9. [국내논문]   Synthesis and Characterization of Zinc Phosphate Cement Powder and Cement-forming Liquid  

    Park, Choon-Keun
    The Korean journal of ceramics v.3 no.4 ,pp. 269 - 273 , 1997 , 1225-9381 ,

    초록

    Chemical composition of cement powder influences the setting time and early compressive strength development. The setting time increases as the amounts of zinc oxide and magnesium oxide are increased. For one day compressive strength development, a cement powder with a composition 90% ZnO, 8% MgO and 2% silica resulted in the highest strength (greater than 1, 090 kg/ $\textrm{cm}^2$ ). Cement-forming liquids also need to be buffered, with both aluminum and zinc ions, for a good consistency and a higher strength of the zinc phosphate cement. These liquids control the setting reactions.

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  10. [국내논문]   Annelaing Effects on the Dielectric Properties of the (Ba, Sr) $TiO_3$Films on $RuO_2$Bottom Electrodes  

    Park, Young-Chul (Department of Semiconductor Science and Technology, Chonbuk National University ) , Lee, Joon (Department of Industrial Chemistry, Kon Kuk University ) , Lee, Byung-Soo (Department of Materials Engineering, Chonbuk National University)
    The Korean journal of ceramics v.3 no.4 ,pp. 274 - 278 , 1997 , 1225-9381 ,

    초록

    (Ba, Sr) TiO $_3$ (BST) thin films were prepared on RuO $_2$ /Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80 $0^{\circ}C$ in $N_2$ or $O_2$ atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO $_2$ bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$ annealing was more severe than that by $N_2$ -annealing. As a result, there was no flat region when the films were annealed at 700 and 80 $0^{\circ}C$ in $O_2$ atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$ atmosphere.

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