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Physica E, Low-dimensional systems & nanostructure...Physica E, Low-dimensional systems & nanostructures 11건

  1. [해외논문]   Editorial Board  


    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. ii - ii , 2018 , 1386-9477 ,

    초록

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  2. [해외논문]   Effect of Mo and Ti doping concentration on the structural and optical properties of ZnS nanoparticles  

    Naz, Hina (Corresponding author.) , Ali, Rai Nauman , Zhu, Xingqun , Xiang, Bin
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 1 - 6 , 2018 , 1386-9477 ,

    초록

    Abstract In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV–visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices. Highlights A tunable energy band gap of ZnS has been achieved due to Mo and Ti doping. Size distribution variation has been confirmed by different dopant concentrations. XRD confirms the single phase of undoped and doped ZnS nanoparticles. XPS confirms the successful incorporation of Mo and Ti in ZnS nanoparticles.

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  3. [해외논문]   Spin-polarized currents in a two-terminal double quantum ring driven by magnetic fields and Rashba spin-orbit interaction  

    Dehghan, E. (Department of Physics, Semnan University, Semnan 35195-363, Iran ) , Khoshnoud, D. Sanavi (Department of Physics, Semnan University, Semnan 35195-363, Iran ) , Naeimi, A.S. (Department of Physics, Aliabad Katoul Branch, Islamic Azad University, Aliabad Katoul, Iran)
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 7 - 13 , 2018 , 1386-9477 ,

    초록

    Abstract Aim of this study is to investigate spin transportation in double quantum ring (DQR). We developed an array of DQR to measure the transmission coefficient and analyze the spin transportation through this system in the presence of Rashba spin-orbit interaction (RSOI) and magnetic flux estimated using S-matrix method. In this article, we compute the spin transport and spin-current characteristics numerically as functions of electron energy, angles between the leads, coupling constant of the leads, RSOI, and magnetic flux. Our results suggest that, for typical values of the magnetic flux ( ϕ / ϕ 0 ) and Rashba constant ( α R ), such system can demonstrates many spintronic properties. It is possible to design a new geometry of DQR by incoming electrons polarization in a way to optimize the system to work as a spin-filtering and spin-inverting nano-device with very high efficiency. The results prove that the spin current will strongly modulate with an increase in the magnetic flux and Rashba constant. Moreover it is shown that, when the lead coupling is weak, the perfect spin-inverter does not occur. Highlights Spin transport through new geometry of double quantum ring is studied in the presence of the Rashba SOI using S-matrix method. New geometry of double quantum ring can act as a perfect spin-inverter when incoming spin current is considered polarized. New geometry of double quantum ring by un-polarized incoming spin current can work as a perfect spin-filtering nano-device.

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  4. [해외논문]   Fisher information of a single qubit interacts with a spin-qubit in the presence of a magnetic field  

    Metwally, N. (Department of Mathematics, College of Science, University of Bahrain, P. O. Box 3203, Bahrain)
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 14 - 23 , 2018 , 1386-9477 ,

    초록

    Abstract In this contribution, quantum Fisher information is utilized to estimate the parameters of a central qubit interacting with a single-spin qubit. The effect of the longitudinal, transverse and the rotating strengths of the magnetic field on the estimation degree is discussed. It is shown that, in the resonance case, the number of peaks and consequently the size of the estimation regions increase as the rotating magnetic field strength increases. The precision estimation of the central qubit parameters depends on the initial state settings of the central and the spin-qubit, either encode classical or quantum information. It is displayed that, the upper bounds of the estimation degree are large if the two qubits encode classical information. In the non-resonance case, the estimation degree depends on which of the longitudinal/transverse strength is larger. The coupling constant between the central qubit and the spin-qubit has a different effect on the estimation degree of the weight and the phase parameters, where the possibility of estimating the weight parameter decreases as the coupling constant increases, while it increases for the phase parameter. For large number of spin-particles, namely, we have a spin-bath particles, the upper bounds of the Fisher information with respect to the weight parameter of the central qubit decreases as the number of the spin particle increases. As the interaction time increases, the upper bounds appear at different initial values of the weight parameter. Highlights Quantum Fisher information is employed to estimate the parameters of a central. The effect of the field components on the estimation degree is discussed. The estimation precision, depends on the initial state settings of the qubit. In the resonance case, the size of the estimation regions increase as the rotating field strength increases. For the non-resonance case, the estimation degree depends on which of field’s components is larger.

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  5. [해외논문]   Approximate solutions to Mathieu's equation  

    Wilkinson, Samuel A. (Chemical and Quantum Physics, School of Science, RMIT University, Melbourne, Victoria, 3001, Australia ) , Vogt, Nicolas (Chemical and Quantum Physics, School of Science, RMIT University, Melbourne, Victoria, 3001, Australia ) , Golubev, Dmitry S. (Low Temperature Laboratory, Department of Applied Physics, Aalto University School of Science, P.O. Box 13500, FI-00076, Aalto, Finland ) , Cole, Jared H. (Chemical and Quantum Physics, School of Science, RMIT University, Melbourne, Victoria, 3001, Australia)
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 24 - 30 , 2018 , 1386-9477 ,

    초록

    Abstract Mathieu's equation has many applications throughout theoretical physics. It is especially important to the theory of Josephson junctions, where it is equivalent to SchrOdinger's equation. Mathieu's equation can be easily solved numerically, however there exists no closed-form analytic solution. Here we collect various approximations which appear throughout the physics and mathematics literature and examine their accuracy and regimes of applicability. Particular attention is paid to quantities relevant to the physics of Josephson junctions, but the arguments and notation are kept general so as to be of use to the broader physics community. Highlights A step-by-step guide to the various analytical approximations that can be used when dealing with Mathieu's equation. Particular attention is paid to quantities relevant to the physics of Josephson junctions. Analytic approximations are compared with numerical solutions. Second-order corrections to some common approximations can be trivially implemented and greatly improve accuracy.

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  6. [해외논문]   Large thermoelectric efficiency of doped polythiophene junction: A density functional study  

    Golsanamlou, Zahra (Corresponding author.) , Bagheri Tagani, Meysam , Rahimpour Soleimani, Hamid
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 31 - 39 , 2018 , 1386-9477 ,

    초록

    Abstract The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the presence of dopants can bring the structural changes in the oligomer and modify the arrangement of the molecular levels leading to the dramatic changes in the transmission spectra of the junction. Therefore, the large enhancement in thermopower and consequently figure of merit is obtained by dopants which makes the doped PT junction as a beneficial thermoelectric device. Highlights Thermoelectric properties of polythiophene oligomer is studied using density functional theory. Role of dopants like Li, Cl, and Na is examined in detail. Increase of the oligomer length results in modification of thermopower. Dopants can significantly improve thermoelectric efficiency of the molecular junction.

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  7. [해외논문]   Quantum corrections to conductivity in graphene with vacancies  

    Araujo, E.N.D. (Departamento de Física, CCE, Universidade Federal de Viçosa, Viçosa, MG, 36570-900, Brazil ) , Brant, J.C. (Departamento de Física, ICEx, Universidade Federal de Minas Gerais, C.P. 702, Belo Horizonte, MG, 30123-970, Brazil ) , Archanjo, B.S. (Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Normalização e Qualidade Industrial (INMETRO), Duque de Caxias, RJ 25250-020, Brazil ) , Medeiros-Ribeiro, G. (Departamento de Física, ICEx, Universidade Federal de Minas Gerais, C.P. 702, Belo Horizonte, MG, 30123-970, Brazil ) , Alves, E.S. (Departamento de Física, ICEx, Universidade Federal de Minas Gerais, C.P. 702, Belo Horizonte, MG, 30123-970, Brazil)
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 40 - 44 , 2018 , 1386-9477 ,

    초록

    Abstract In this work, different regions of a graphene device were exposed to a 30 keV helium ion beam creating a series of alternating strips of vacancy-type defects and pristine graphene. From magnetoconductance measurements as function of temperature, density of carriers and density of strips we show that the electron-electron interaction is important to explain the logarithmic quantum corrections to the Drude conductivity in graphene with vacancies. It is known that vacancies in graphene behave as local magnetic moments that interact with the conduction electrons and leads to a logarithmic correction to the conductance through the Kondo effect. However, our work shows that it is necessary to account for the non-homogeneity of the sample to avoid misinterpretations about the Kondo physics due the difficulties in separating the electron-electron interaction from the Kondo effect. Highlights Each contribution to conductivity in graphene was investigated in detail. Electron-electron interaction can not be neglected in graphene with vacancies. The non-inclusion of inhomogeneity give rise misinterpretations about Kondo effect.

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  8. [해외논문]   One-pot electrochemical growth of sponge-like polyaniline-intercalated phosphorous-doped graphene oxide on nickel foam as binder-free electrode material of supercapacitor  

    Bigdeli, Hadise (Department of Semiconductors, Materials and Energy Research Center (MERC), P.O. Box 31787-316, Tehran, Iran ) , Moradi, Morteza (Department of Semiconductors, Materials and Energy Research Center (MERC), P.O. Box 31787-316, Tehran, Iran ) , Borhani, Saeid (Department of Semiconductors, Materials and Energy Research Center (MERC), P.O. Box 31787-316, Tehran, Iran ) , Jafari, Elnaz Abbasi (Department of Semiconductors, Materials and Energy Research Center (MERC), P.O. Box 31787-316, Tehran, Iran ) , Hajati, Shaaker (Department of Semiconductors, Materials and Energy Research Center (MERC), P.O. Box 31787-316, Tehran, Iran ) , Kiani, Mohammad Ali (Chemistry & Chemical Engineering Research Center of Iran, P.O. Box 14335-186, Tehran, Iran)
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 45 - 53 , 2018 , 1386-9477 ,

    초록

    Abstract In this work, phosphor-doped graphene oxide (PGO) was synthesized by chemical technique. Also, the sponge-like PGO@polyaniline nanocomposite (PGO@PANI) film was coated on the nickel foam by one-step electropolymerization. The active materials were then characterized by Fourier transforms infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy, X-ray diffraction, and Brunauer-Emmett-Teller technique. When PANI/PGO was used as supercapacitor electrode, under current density of 1 A/g, the specific capacitance of the prepared PGO@PANI was measured as 603 F/g, which is 6.0 times higher than that of pure PANI (102 F/g). Moreover, capacity stability of the PANI/PGO increased significantly as compared to PANI (65% vs. 44%) after increasing the current density from 1 to 15 A/g. The clear electrochemical performance of PANI/PGO was enhanced owing to the synergistic effect of PGO and PANI. Our results demonstrate that PANI/PGO nanosheet arrays are promising candidate for electrode supercapacitor applications. Highlights Phosphor-doped graphene oxide (PGO) was synthesized by chemical technique. The sponge-like PGO@polyaniline nanocomposite (PGO@PANI) film was coated on the nickel foam. The specific capacitance of the prepared PGO@PANI was measured as 603 F/g. The asymmetric device showing energy and power densities of 7.91 Wh/kg and 7826.22 W/kg.

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  9. [해외논문]   Array of nanoparticles coupling with quantum-dot: Lattice plasmon quantum features  

    Salmanogli, Ahmad (Faculty of Electrical and Computer Engineering, Tabriz University, 51666, Tabriz, Iran ) , Gecim, H. Selcuk (Faculty of Engineering, Çankaya University Electrical and Electronics Engineering Department, Ankara, Turkey)
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 54 - 62 , 2018 , 1386-9477 ,

    초록

    Abstract In this study, we analyze the interaction of lattice plasmon with quantum-dot in order to mainly examine the quantum features of the lattice plasmon containing the photonic/plasmonic properties. Despite optical properties of the localized plasmon, the lattice plasmon severely depends on the array geometry, which may influence its quantum features such as uncertainty and the second-order correlation function. To investigate this interaction, we consider a closed system containing an array of the plasmonic nanoparticles and quantum-dot. We analyze this system with full quantum theory by which the array electric far field is quantized and the strength coupling of the quantum-dot array is analytically calculated. Moreover, the system's dynamics are evaluated and studied via the Heisenberg-Langevin equations to attain the system optical modes. We also analytically examine the Purcell factor, which shows the effect of the lattice plasmon on the quantum-dot spontaneous emission. Finally, the lattice plasmon uncertainty and its time evolution of the second-order correlation function at different spatial points are examined. These parameters are dramatically affected by the retarded field effect of the array nanoparticles. We found a severe quantum fluctuation at points where the lattice plasmon occurs, suggesting that the lattice plasmon photons are correlated. Highlights Full quantum theory analyzing the photonic mode interaction with the nanoparticle’s plasmonic and quantizing the lattice plasmon field. Examining the analytical expression for the lattice plasmon interaction with QDs including Purcell factor and their effective coupling strength. Investigation of the lattice plasmon quantum fluctuation. Studying the uncertainty principle for the lattice plasmon.

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  10. [해외논문]   A computational study on tuning the field emission and electronic properties of BN nanocones by impurity atom doping  

    Ahmadi, S. (Department of Chemistry, Payame Noor University, P.O. Box 19395-3697, Tehran, Iran ) , Delir Kheirollahi Nezhad, P. (Department of Chemistry, Payame Noor University, P.O. Box 19395-3697, Tehran, Iran ) , Hosseinian, A. (Department of Engineering Science, College of Engineering, University of Tehran, P.O. Box 11365-4563, Tehran, Iran ) , Vessally, E. (Department of Chemistry, Payame Noor University, P.O. Box 19395-3697, Tehran, Iran)
    Physica E, Low-dimensional systems & nanostructures v.100 ,pp. 63 - 68 , 2018 , 1386-9477 ,

    초록

    Abstract We have inspected the effect of substituting a boron or nitrogen atom of a BN nanocone (BNNC) by two impurity atoms with lower and higher atomic numbers based on the density functional theory calculations. Our results explain the experimental observations in a molecular level. Orbital and partial density of states analyses show that the doping processes increase the electrical conductivity by creating new states within the gap of BNNC as follows: Be B > O N > C B > C N . The electron emission current from the surface of BNNC is improved after the C B and Be B dopings, and it is decreased by C N and O N dopings. The Be B and C N dopings make the BNNC a p -type semiconductor and the C B and O N dopings make it an n -type one in good agreement with the experimental results. The O N and Be B doping processes are suggested for the field emission current, and electrical conductivity enhancement, respectively. Highlights Replacing a B or N atom of a BN nanocone by Be, C, and O atoms is studied by DFT. All doping processes increase the electrical conductivity. Emitted electron current density increases after the C B and Be B dopings. Emitted electron current density increases after by C N and O N dopings. The Be B and C N dopings make the BN nanocone a p -type semiconductor.

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